1 AMP 400 - 900 V Hyper Fast Rectifier

Features: • Hyper fast recovery: 40 nsec maximum • PIV to 1000 Volts, consult factory • Hermetically sealed • Void free construction • For high efficiency applications • Replaces UES 1104, UES1106, 1N6621-1N6625 • TX, TXV, and S level screening available2/

1 A, 900 V Hyperfast Recovery Rectifier

\n• Hyperfast Recovery: 40 nsec Maximum\n• PIV to 1000 Volts, Consult Factory\n• Hermetically Sealed\n• Void Free Construction\n• For High Efficiency Applications\n• Replaces UES 1104, UES1106, 1N6621-1N6625\n• TX, TXV, and S Level Screening Available;

Hyper Fast Rectifier

文件：105.08 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1 AMP 400 - 900 V Hyper Fast Rectifier

Features: • Hyper fast recovery: 40 nsec maximum • PIV to 1000 Volts, consult factory • Hermetically sealed • Void free construction • For high efficiency applications • Replaces UES 1104, UES1106, 1N6621-1N6625 • TX, TXV, and S level screening available2/

1 A, 900 V Hyperfast Recovery Rectifier

\n• Hyperfast Recovery: 40 nsec Maximum\n• PIV to 1000 Volts, Consult Factory\n• Hermetically Sealed\n• Void Free Construction\n• For High Efficiency Applications\n• Replaces UES 1104, UES1106, 1N6621-1N6625\n• TX, TXV, and S Level Screening Available;

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

N-channel dual-gate MOS-FETs

DESCRIPTION Enhancement type N-channel field-effect transistor with source and substrate interconnected. Integrated diodes between gates and source protect against excessive input voltage surges. The BF1109, BF1109R and BF1109WR are encapsulated in the SOT143B, SOT143R and SOT343R plastic package

Photo Interrupter

For contactless SW, object detection Outline ON1109 is a photocoupler in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to f

RECTIFIER DIODE

文件：166.81 Kbytes Page：4 Pages