1 AMP 400 - 900 V Hyper Fast Rectifier

Features: • Hyper fast recovery: 40 nsec maximum • PIV to 1000 Volts, consult factory • Hermetically sealed • Void free construction • For high efficiency applications • Replaces UES 1104, UES1106, 1N6621-1N6625 • TX, TXV, and S level screening available2/

1AMP 400-900V HYER FAST RECTIFIER

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Hyper Fast Rectifier

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1 A, 800 V Hyperfast Recovery Rectifier

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1 A, 800 V Hyperfast Recovery Rectifier

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

1AMP 400-900V HYER FAST RECTIFIER

文件：207.32 Kbytes Page：2 Pages

Silicon RF switches

DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca

Silicon RF switches

DESCRIPTION These switches are a combination of a depletion type field-effect transistor and a bandswitching diode in an SOT143B (BF1108) or SOT143R (BF1108R) package. The low loss and high isolation capabilities of these devices provide excellent RF switching functions. The gate of the MOSFET ca

Melody IC

Optocoupler with Phototransistor Output

DESCRIPTION The TCET110. consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 4-lead plastic dual inline package. FEATURES • High common mode rejection • Low temperature coefficient of CTR • CTR offered in 9 groups • Reinforced isolation provides

SOLID STATE I/O INTERFACE MODULE (DC INPUT MODULE)

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