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SGW价格
参考价格：￥9.8960
型号：SGW10N60A 品牌：Infineon 备注：这里有SGW多少钱，2024年最近7天走势，今日出价，今日竞价，SGW批发/采购报价，SGW行情走势销售排行榜，SGW报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
Fast IGBT in NPT-technology FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   | |
HighSpeed 2-Technology •Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Ultra-Fast IGBT GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | | |
Ultra-Fast IGBT GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeeds | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Fast IGBT in NPT-technology FastIGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebeha | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology FastIGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebeha | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology FastIGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebeha | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast S-IGBT in NPT-technology FastS-IGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistributio | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
High Speed IGBT in NPT-technology HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature - | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Ultra-Fast IGBT GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Ultra-Fast IGBT GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Fast IGBT in NPT-technology FastIGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebeha | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
High Speed IGBT in NPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytightparameterdistribution • | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Ultra-Fast IGBT GeneralDescription FairchildsUFseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeedswi | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Ultra-Fast IGBT GeneralDescription FairchildsUFDseriesofInsulatedGateBipolarTransistors(IGBTs)provideslowconductionandswitchinglosses.TheUFDseriesisdesignedforapplicationssuchasmotorcontrolandgeneralinverterswherehighspeedswitchingisarequiredfeature. Features •Highspeeds | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Fast IGBT in NPT-technology 文件：312.21 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology 文件：813.99 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology 文件：813.99 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation 文件：353.85 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Short Circuit Rated IGBT 文件：541.97 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Short Circuit Rated IGBT 文件：596.68 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：管件 描述：IGBT 600V 13A 60W D2PAK 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
Fast IGBT in NPT-technology 40 lower Eoff compared to previous generation 文件：407.98 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
封装/外壳：TO-247-3 包装：管件 描述：IGBT 1200V 30A 198W TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Short Circuit Rated IGBT 文件：557.14 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Short Circuit Rated IGBT 文件：557.14 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Short Circuit Rated IGBT 文件：538.99 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation 文件：364.5 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
High Speed IGBT in NPT-technology 30 lower Eoff compared to previous generation 文件：388.34 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Short Circuit Rated IGBT 文件：538.99 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Fast IGBT in NPT-technology 40 lower Eoff compared to previous generation 文件：338.47 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology 40 lower Eoff compared to previous generation 文件：338.47 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology 文件：335.72 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology 文件：367.38 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Fast IGBT in NPT-technology 文件：425.17 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Short Circuit Rated IGBT 文件：556.04 Kbytes Page：7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
Short Circuit Rated IGBT 文件：615.22 Kbytes Page：8 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | |
SGW产品属性
- 类型
描述
- 型号
SGW
- 制造商
INFINEON
- 制造商全称
Infineon Technologies AG
- 功能描述
Fast IGBT in NPT-technology
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
23+ |
10A,600V,不带D |
20000 |
全新原装假一赔十 |
|||
INFINEON/英飞凌 |
24+ |
TO247 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
FAIRCHILD/仙童 |
22+ |
SOT-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
22+ |
TO-247 |
15000 |
英飞凌MOS管、IGBT大量有货 |
|||
INFINEON/英飞凌 |
22+ |
TO247 |
20000 |
原装现货,实单支持 |
|||
FAIRCHILD/仙童 |
2022 |
TO263 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
FAIRCHILD |
22+ |
35000 |
OEM工厂,中国区10年优质供应商! |
||||
INFINEON |
23+ |
PG-TO247-3 |
6800 |
只做原装正品现货 |
|||
FAIRCHILD/仙童 |
21+ |
TO-263 |
9852 |
只做原装正品现货!或订货假一赔十! |
|||
ON-安森美 |
24+25+/26+27+ |
TO-263-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
SGW芯片相关品牌
SGW规格书下载地址
SGW参数引脚图相关
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SGW数据表相关新闻
SGP30-2.5K只有原装，只做原装
SGP30-2.5K只有原装，只做原装
2023-4-11SH367306Q
SH367306Q，全新原装当天发货或门市自取0755-82732291.
2020-4-29SH102，SH14-080Z-030，SH2-26T
SH102，SH14-080Z-030，SH2-26T
2020-4-27SGS10N60RUFDTU原装现货厂商：FAIRCHILD/仙童13+封装：TO-220F
SGS10N60RUFDTU 60 FAIRCHILD/仙童 13+ TO-220F
2019-9-11SH367106
SH367106
2019-8-8SGMSGM2036-18YUDH4G/TRUTDFN1x1-4L18+DFN4主打产品原装现货
SGMSGM2036-18YUDH4G/TRUTDFN1x1-4L18+DFN4主打产品原装现货
2018-12-27
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