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SGP15N60价格
参考价格：￥9.8794
型号：SGP15N60XKSA1 品牌：Infineon 备注：这里有SGP15N60多少钱，2024年最近7天走势，今日出价，今日竞价，SGP15N60批发/采购报价，SGP15N60行情走势销售排行榜，SGP15N60报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
SGP15N60 | FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  |   |
SGP15N60 | ShortCircuitRatedIGBT GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)RUFseriesprovideslowconductionandswitchinglossesaswellasshortcircuitruggedness.RUFseriesisdesignedfortheapplicationssuchasmotorcontrol,UPSandgeneralinverterswhereshort-circuitruggednessisrequir | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 |  | |
SGP15N60 | FastIGBTinNPT-technology FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
ShortCircuitRatedIGBT GeneralDescription FairchildsInsulatedGateBipolarTransistor(IGBT)RUFseriesprovideslowconductionandswitchinglossesaswellasshortcircuitruggedness.RUFseriesisdesignedfortheapplicationssuchasmotorcontrol,UPSandgeneralinverterswhereshort-circuitruggednessisrequir | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | | | |
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 24A 160W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 31A 139W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
15Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC15N60isanN-channelmodepowerMOSFETusingUTC’sadvancedtechnologytoprovidecostumerswithplanarstripeandDMOStechnology.Thistechnologyisspecializedinallowingaminimumon-stateresistanceandsuperiorswitchingperformance.Italsocanwithstandhighenergypu | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 |  | | |
N-Channel650V(D-S)PowerMOSFET 文件：1.0671 Mbytes Page：9 Pages | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 |  | | |
15A,600VN-CHANNELPOWERMOSFET 文件：185.37 Kbytes Page：6 Pages | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | | | |
HighSwitchingSpeed 文件：49.33 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  | | |
CoolMOSPowerTransistor 文件：543.38 Kbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
SGP15N60产品属性
- 类型
描述
- 型号
SGP15N60
- 功能描述
IGBT 晶体管 FAST IGBT NPT TECH 600V 15A
- RoHS
否
- 制造商
Fairchild Semiconductor
- 配置
集电极—发射极最大电压
- VCEO
650 V
- 集电极—射极饱和电压
2.3 V
- 栅极/发射极最大电压
20 V 在25
- C的连续集电极电流
150 A
- 栅极—射极漏泄电流
400 nA
- 功率耗散
187 W
- 封装/箱体
TO-247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON |
1321+ |
TO220 |
40 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
22+ |
PG-TO220-3 |
92332 |
||||
SEC |
24+ |
TO220 |
990000 |
明嘉莱只做原装正品现货 |
|||
INFINEON/英飞凌 |
23+ |
NA/ |
3650 |
原厂直销,现货供应,账期支持! |
|||
SEC |
22+ |
TO220 |
12000 |
只做原装、原厂优势渠道、假一赔十 |
|||
INFINEON/英飞凌 |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
|||
INFINEON |
23+ |
PG-TO220-3 |
6800 |
只做原装正品现货 |
|||
INFINEO |
1735+ |
TO220 |
6528 |
科恒伟业!只做原装正品!假一赔十! |
|||
infineon |
20+/21+ |
TO-220 |
9030 |
全新原装公司现货 |
|||
INFINEON |
2305+ |
原厂封装 |
8900 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
SGP15N60芯片相关品牌
SGP15N60规格书下载地址
SGP15N60参数引脚图相关
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SGP15N60数据表相关新闻
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DdatasheetPDF页码索引
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