Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg

Short Circuit Rated IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is requir

Fast IGBT in NPT-technology

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution

Short Circuit Rated IGBT

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

Fast IGBT in NPT-technology • 75 lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers: - very tight parameter distribution - high rugg

Short Circuit Rated IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) RUF series provides low conduction and switching losses as well as short circuit ruggedness. RUF series is designed for the applications such as motor control, UPS and general inverters where short-circuit ruggedness is requir

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 24A 160W TO220 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT 600V 31A 139W TO220-3

封装/外壳：TO-220-3 包装：管件 描述：IGBT 600V 31A 139W TO220-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

15 Amps, 600 Volts N-CHANNEL MOSFET

DESCRIPTION The UTC15N60 is an N-channel mode power MOSFET using UTC’s advanced technology to provide costumers with planar stripe and DMOS technology. This technology is specialized in allowing a minimum on-state resistance and superior switching performance. It also can withstand high energy pu

15A, 600V N-CHANNEL POWER MOSFET

文件：185.37 Kbytes Page：6 Pages

High Switching Speed

文件：49.33 Kbytes Page：2 Pages

N-Channel 650V (D-S) Power MOSFET

文件：1.0671 Mbytes Page：9 Pages

CoolMOS Power Transistor

文件：543.38 Kbytes Page：12 Pages