Low ON-Resistance, Low Voltage, SPDT Analog Switch

GENERAL DESCRIPTION The SGM3001 (single) and SGM3002 (dual) are bidirectional, low on-resistance, low voltage, single-pole/double-throw (SPDT) CMOS analog switches designed to operate from a single +1.8V to +5.5V supply. Targeted applications include battery powered equipment that benefit from

Low ON-Resistance

文件：323.35 Kbytes Page：12 Pages

Low On-Resistance, Low Voltage, SPDT Analog Switch

Low ON-Resistance, Low Voltage, SPDT Analog Switch

GENERAL DESCRIPTION The SGM3001 (single) and SGM3002 (dual) are bidirectional, low on-resistance, low voltage, single-pole/double-throw (SPDT) CMOS analog switches designed to operate from a single +1.8V to +5.5V supply. Targeted applications include battery powered equipment that benefit from

Low ON-Resistance, Low Voltage, SPDT Analog Switch

GENERAL DESCRIPTION The SGM3001 (single) and SGM3002 (dual) are bidirectional, low on-resistance, low voltage, single-pole/double-throw (SPDT) CMOS analog switches designed to operate from a single +1.8V to +5.5V supply. Targeted applications include battery powered equipment that benefit from

Low ON-Resistance

文件：323.35 Kbytes Page：12 Pages

KK Maxi-3.96mm & 5.08mm Modular Interconnection System

KEY FEATURES ■ Available on 3.96 mm and 5.08 mm center spacings ■ Polarisation via insertable keys and pegs ■ Allows connections anywhere on the board ■ Double cantilever style terminal ■ Selective gold plating options ■ End-to-end stacking capabilities ■ Locking ramp for improved mated ret

RF Manual 16th edition

MICROWAVE CW BIPOLAR

[ACRIAN INC] GENERAL DESCRIPTION The 3001 is a common base transistor capable of providing 1 Watts of CW RF output power at 3000 MHz. This hermetically sealed transistor is specifically designed telemetry and telecommunications applications. It uses gold metalization and diffused ballasting to p

1 Watt - 28 Volts, Class C Microwave 3000 MHz

GENERAL DESCRIPTION The 3001 is a COMMON BASE transistor capable of providing 1 Watts Class C, RF output power at 3000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor uses a fully hermetic High Temperature Solder Sealed pa

KNOB

文件：80.14 Kbytes Page：1 Pages