N-CHANNEL IGBT

FEATURES * High Speed Switching * Low Saturation Voltage : VCE(sat) = 1.95 V (@ Ic=12A) * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast

N-CHANNEL IGBT

Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low

High Input Impedance

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low

封装/外壳：TO-3P-3，SC-65-3 包装：管件 描述：IGBT 600V 23A 100W TO3P 分立半导体产品 晶体管 - UGBT、MOSFET - 单

N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET

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N-CHANNEL SILICON POWER MOSFET

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isc N-Channel MOSFET Transistor

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N-CHANNEL SILICON POWER MOSFET

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