Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UF series provides low conduction and switching losses. UF series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low S

IGBT，600V，PT

Ultra-Fast IGBT

General Description Fairchilds Insulated Gate Bipolar Transistor(IGBT) UFD series provides low conduction and switching losses. UFD series is designed for the applications such as motor control and general inverters where High Speed Switching is required. Features • High Speed Switching • Low

TO-3PF Tube Packing Data

文件：363.83 Kbytes Page：1 Pages

封装/外壳：TO-3P-3 整包 包装：管件 描述：IGBT 600V 23A 75W TO3PF 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-3P-3 整包 包装：管件 描述：IGBT 600V 23A TO3PF 分立半导体产品 晶体管 - UGBT、MOSFET - 单

600 V PT IGBT

文件：277.97 Kbytes Page：7 Pages

N-CHANNEL SILICON POWER MOSFET

文件：585.96 Kbytes Page：5 Pages

N-CHANNEL SILICON POWER MOSFET

文件：585.01 Kbytes Page：5 Pages

N-CHANNEL SILICON POWER MOSFET

文件：592.4 Kbytes Page：5 Pages

isc N-Channel MOSFET Transistor

文件：324.14 Kbytes Page：2 Pages

N-CHANNEL SILICON POWER MOSFET

文件：576.1 Kbytes Page：5 Pages