SGB价格

参考价格:¥4.8971

型号:SGB02N120 品牌:Infineon 备注:这里有SGB多少钱,2024年最近7天走势,今日出价,今日竞价,SGB批发/采购报价,SGB行情走势销售排行榜,SGB报价。
型号 功能描述 生产厂家&企业 LOGO 操作
SGB

SURFACE MOUNT RECTIFIER

FEATURES ●Lowprofilepackage ●Forsurfacemountedapplications ●Highcurrentcapability ●Built-instrainrelief,idealforautomatedplacement ●PlasticpackagehasUnderwritersLaboratoryFlammabilityClassification94V-0 ●Hightemperaturesoldering:250℃/10secondsatterminals

BILINGalaxy Semi-Conductor Holdings Limited

世纪微电子常州银河世纪微电子股份有限公司

BILIN
SGB

包装:散装 描述:ACCY MOB SPRING GUARD B\u0026C BLACK RF/IF,射频/中频和 RFID RF 配件

TE Connectivity Laird

TE Connectivity Laird

TE Connectivity Laird

Fast S-IGBT in NPT-technology

FastS-IGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor:   -Motorcontrols   -Inverter   -SMPS •NPT-Technologyoffers:   -verytightparameterdistribution   -highruggedness,temperaturestablebehavio

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

FAST IGBT IN NPT TECHNOLOGY

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology

FastIGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebehaviour -parallelswi

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

HighSpeed 2-Technology

•Designedfor: -TV–HorizontalLineDeflection •2ndgenerationHighSpeed-Technology for1200Vapplicationsoffers: -lossreductioninresonantcircuits -temperaturestablebehavior -parallelswitchingcapability -tightparameterdistribution -EoffoptimizedforIC=3A -simpleGa

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgeneration combinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution -highrugg

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology

FastIGBTinNPT-technology •40lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter -SMPS •NPT-Technologyoffers: -verytightparameterdistribution -highruggedness,temperaturestablebeha

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology

FastIGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwithlowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistribution

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

High Speed IGBT in NPT-technology

HighSpeedIGBTinNPT-technology •30lowerEoffcomparedtopreviousgeneration •Shortcircuitwithstandtime–10µs •Designedforoperationabove30kHz •NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast S-IGBT in NPT-technology

FastS-IGBTinNPT-technology •75lowerEoffcomparedtopreviousgenerationcombinedwith lowconductionlosses •Shortcircuitwithstandtime–10µs •Designedfor: -Motorcontrols -Inverter •NPT-Technologyfor600Vapplicationsoffers: -verytightparameterdistributio

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology Lower Eoff compared to previous generation

文件:439.41 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology Lower Eoff compared to previous generation

文件:439.41 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件:798.16 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件:798.16 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 包装:管件 描述:IGBT 600V 6A 30W TO263-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件:792.59 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件:792.59 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件:790.17 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件:790.17 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology lower Eoff compared to previous generation

文件:443.8 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology lower Eoff compared to previous generation

文件:443.8 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:39.03 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

HIGH VOLTAGE RECTIFIER

文件:165.75 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

HIGH VOLTAGE RECTIFIER

文件:165.75 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:21.2 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

Fast IGBT in NPT-technology

文件:841.74 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology

文件:841.74 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology

文件:796.61 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology

文件:796.61 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

High Speed IGBT in NPT-technology

文件:820.88 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

High Speed IGBT in NPT-technology

文件:820.88 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:39.03 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

HIGH VOLTAGE RECTIFIER

文件:165.75 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:21.2 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件:795.82 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

Fast IGBT in NPT-technology 75 lower Eoff compared to previous generation

文件:795.82 Kbytes Page:11 Pages

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

Infineon

60 mA 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:39.03 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

HIGH VOLTAGE RECTIFIER

文件:165.75 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMPS 1000 - 3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:21.2 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

60 mAMP 1000-3500 VOLTS 60 nsec HIGH VOLTAGE RECTIFIER

文件:81.97 Kbytes Page:2 Pages

SSDI

SSDI

SSDI

DC-4.5GHz Active Bias Gain Block

文件:194.39 Kbytes Page:6 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

ETC

DC - 4.5 GHz Active Bias Gain Block

文件:125.5 Kbytes Page:6 Pages

SIRENZASIRENZA

圆通微波上海圆通微波电子有限公司

SIRENZA

DC to 4.5GHZ ACTIVE BIAS GAIN BLOCK High Reliability SiGe HBT Technology

文件:206.8 Kbytes Page:8 Pages

RFMD

RF Micro Devices

RFMD

SGB产品属性

  • 类型

    描述

  • 型号

    SGB

  • 功能描述

    ACCY MOB SPRING GUARD B&C BLACK

  • RoHS

  • 类别

    RF/IF 和 RFID >> RF配件

  • 系列

    *

  • 标准包装

    1

  • 系列

    *

更新时间:2024-6-7 9:08:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
Infineon(英飞凌)
23+
N/A
589610
新到现货 原厂一手货源 价格秒杀代理!
INFINEON/英飞凌
22+
TO-263
3750
原装现货假一赔十
INFINEON/英飞凌
TO-263
货真价实,假一罚十
25000
INFINEON
23+
TO-263
3000
原装正品假一罚百!可开增票!
INENOI
21+
SOT263
50000
全新原装正品现货,支持订货
Infineon/英飞凌
2023+
PG-TO263-3
6000
全新原装深圳仓库现货有单必成
Infineon/英飞凌
2018+
TO-263
8000
原装正品现货,可开13点税
infineon
22+
SOT263
9250
绝对原装现货,价格低,欢迎询购!
INFINEON
21+
SOT263
10000
原装现货假一罚十
INFINEON/英飞凌
2021+
SOT-263
17679
原装进口假一罚十

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