Medium Power Discrete SiGe Transistor

Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is

Silicon Germanium HBT Amplifier

[Sirenza] Product Description Sirenza Microdevices’ SGA-9189 is a high performance amplifier designed for operation from DC to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) proces

Reliability Qualification Report

Introduction Stanford Microdevices’ SGA-9189 is a high performance amplifier designed for operation from DC to 3500 MHz. With optimal matching at 2 GHz, TOI = 39 dBm and P1dB=26 dBm. This RF device uses the latest Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The proces

Reliability Qualification Report

Medium Power Discrete SiGe Transistor

Medium Power Discrete SiGe Transistor

Product Description Sirenza Microdevices’ SGA-9189 is a high performance transistor designed for operation to 3 GHz. With optimal matching at 2 GHz, OIP3=39 dBm and P1dB=25.5 dBm. This RF device is based on a Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) process. The SGA-9189 is

Countersunk Type H Rivets

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Common supply manifold

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12V/24V High Sensitivity Hall IC for FAN Driver

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12V/24V High Sensitivity Hall IC for FAN Driver

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RF AMPLIFIER MODEL

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