PULSE WIDTH MODULATOR CONTROL CIRCUITS

Pulse Width Modulator Control Circuits The SG3525A, SG3527A pulse width modulator control circuits offer improved performance and lower external parts count when implemented for controlling all types of switching power supplies. The on–chip +5.1 V reference is trimmed to ±1 and the error amplifie

REGULATING PULSE WIDTH MODULATOR

Description The SG1525A/1527A series of pulse width modulator integrated circuits are designed to offer improved performance and lower external parts count when used to implement all types of switching power supplies. The on-chip +5.1 V reference is trimmed to ±1 initial accuracy and the input co

LINEAR INTEGRATED CIRCUITS

REGULATING PULSE WIDTH MODULATORS

DESCRIPTION The SG3525Aseries of pulse width modulator integrated circuits are designed to offer improved performance and lowered external parts count when used in designing all types of switching power supplies. The on-chip + 5.1 V reference is trimmed to ± 1 and the input common-mode range of

The working voltage range is 8~35V

description The accuracy of the chip +5.1V reference voltage is 1. Because the reference voltage is within the input common-mode range of the error amplifier, there is no need for an external resistor. 3525 can work in master-slave mode and can also be synchronized with external clock. The dead t

PWM

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封装/外壳：16-DIP（0.300"，7.62mm） 功能：升压/降压 包装：卷带（TR） 描述：IC REG CTRLR PUSH-PULL 16DIP 集成电路（IC） DC-DC 开关控制器

封装/外壳：16-DIP（0.300"，7.62mm） 功能：升压/降压 包装：管件 描述：IC REG CTRLR PUSH-PULL 16DIP 集成电路（IC） DC-DC 开关控制器

Regulating Pulse Width Modulators

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Pulse Width Modulator Control Circuit

文件：146.64 Kbytes Page：10 Pages

REGULATING PULSE WIDTH MODULATORS

文件：939.46 Kbytes Page：12 Pages

Pulse Width Modulator Control Circuit

文件：145.61 Kbytes Page：10 Pages

REGULATING PULSE WIDTH MODULATOR

文件：241.28 Kbytes Page：7 Pages

Pulse Width Modulator Control Circuit

文件：145.61 Kbytes Page：10 Pages

Pulse Width Modulator Control Circuit

文件：146.64 Kbytes Page：10 Pages

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 20A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

isc N-Channel MOSFET Transistor

DESCRIPTION ·Drain Current :ID= 23A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·high voltage, high speed power switching

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 21A@ TC=25℃ ·Drain Source Voltage : VDSS= 350V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.25Ω(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-

Micropower, High Accuracy

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Micropower, High Accuracy

文件：862.87 Kbytes Page：20 Pages