5 AMP 200 Volts HIGH SPEED NPN Transistor

Features: • Radiation Tolerant • Fast Switching • High Frequency, 50 MHz Typical • BVCEO 150 Volts Min • High Linear Gain • Very Low Leakage and Saturation • 200ºC Operating Temperature • Gold Eutectic Die Attach • Designed for Complementary Use with SFT501 and SFT503

5 A, 150 V High Speed NPN Transistor

• Radiation Tolerant\n• High Frequency, 50 MHz Typical\n• High Linear Gain\n• 200°C Operating Temperature\n• Designed for Complementary Use with SFT501 andSFT503;

HIGH EFFICIENCY RECTIFIERS(5.0A,50-400V)

SCHOTTKY BARRIER RECTIFIERS(5.0A,20-60V)

N-CHANNEL MOS FET 5-PIN 2 CIRCUITS

The µPA502T is a mini-mold device provided with two MOS FET circuits. It achieves high-density mounting and saves mounting costs. FEATURES • Two source common MOS FET circuits in package the same size as SC-59 • Complement to µPA503T • Automatic mounting supported

Clamping, Low-Gain Op Amp with Fast 14-bit Settling

文件：397.33 Kbytes Page：6 Pages

Clamping, Low-Gain Op Amp with Fast 14-bit Settling

文件：397.33 Kbytes Page：6 Pages