SFT145晶体管资料
SFT145别名:SFT145三极管、SFT145晶体管、SFT145晶体三极管
SFT145生产厂家:DIT
SFT145制作材料:Ge-PNP
SFT145性质:低频或音频放大 (LF)_开关管 (S)
SFT145封装形式:直插封装
SFT145极限工作电压:45V
SFT145最大电流允许值:0.5A
SFT145最大工作频率:<1MHZ或未知
SFT145引脚数:3
SFT145最大耗散功率:0.35W
SFT145放大倍数:
SFT145图片代号:D-20
SFT145vtest:45
SFT145htest:999900
- SFT145atest:0.5
SFT145wtest:0.35
SFT145代换 SFT145用什么型号代替:AC128K,AC153K,AC193K,3AX55C,
SFT145价格
参考价格:¥1.8398
型号:SFT1450-TL-H 品牌:ONS 备注:这里有SFT145多少钱,2026年最近7天走势,今日出价,今日竞价,SFT145批发/采购报价,SFT145行情走势销售排行榜,SFT145报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
General-Purpose Switching Device Applications General-Purpose Switching Device Applications Features • ON-resistance RDS(on)1=21mΩ(typ) • Input Capacitance Ciss=715pF(typ) • 4.5V drive • Halogen free compliance | SANYO 三洋 | |||
N-Channel Power MOSFET 40V, 21A, 28m, Single TP/TP-FA Features • ON-resistance RDS(on)1=21mΩ(typ.) • Input Capacitance Ciss=715pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 40V, 21A, 28m, Single TP/TP-FA Features • ON-resistance RDS(on)1=21mΩ(typ.) • Input Capacitance Ciss=715pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
N-Channel Power MOSFET 40V, 21A, 28m, Single TP/TP-FA Features • ON-resistance RDS(on)1=21mΩ(typ.) • Input Capacitance Ciss=715pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 40V, 21A, 28m, Single TP/TP-FA Features • ON-resistance RDS(on)1=21mΩ(typ.) • Input Capacitance Ciss=715pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 21A@ TC=25℃ ·Drain Source Voltage -VDSS= 40V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 28mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
N-Channel Power MOSFET 40V, 21A, 28m, Single TP/TP-FA Features • ON-resistance RDS(on)1=21mΩ(typ.) • Input Capacitance Ciss=715pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 40V, 21A, 28m, Single TP/TP-FA Features • ON-resistance RDS(on)1=21mΩ(typ.) • Input Capacitance Ciss=715pF(typ.) • 4.5V drive • Halogen free compliance • Protection diode in | ONSEMI 安森美半导体 | |||
单 N 沟道,功率 MOSFET,250V,3A,2.4Ω This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize input capacitance and gate charge.\nThis devices is suitable for applications with low gate charge driving requirements. • High Speed Switching\n• Reduces dynamic power losses\n• Low Gate Charge\n• Ease of drive, faster turn-on\n• ESD Diode - Protected Gate\n• ESD resistance; | ONSEMI 安森美半导体 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 3A@ TC=25℃ ·Drain Source Voltage -VDSS= 250V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 2.4Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
isc N-Channel MOSFET Transistor FEATURES ·Drain Current -ID= 1A@ TC=25℃ ·Drain Source Voltage -VDSS= 600V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 13Ω(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control | ISC 无锡固电 | |||
N-Channel Power MOSFET 40V, 21A, 28m, Single TP/TP-FA | ONSEMI 安森美半导体 | |||
MOSFET N-CH 40V 21A TP-FA | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:811.53 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:811.53 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:811.53 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:811.53 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:811.53 Kbytes Page:6 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:371.82 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:371.82 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
N-Channel Power MOSFET 文件:371.82 Kbytes Page:5 Pages | ONSEMI 安森美半导体 | |||
GaAlAs Red Light Emitting Diode GaAlAs Red Light Emitting Diode Light source for optical fiber communications, Features ● Red light emission close to monochromatic light : λP = 700 nm ● High-power output, high-efficiency ● High coupling characteristics and suits to a plastic fiber ● High-speed response : –3dB modulation of | PANASONIC 松下 | |||
GaAlAs Red Light Emitting Diode GaAlAs Red Light Emitting Diode Light source for optical fiber communications, Features ● Red light emission close to monochromatic light : λP = 700 nm ● High-power output, high-efficiency ● High coupling characteristics and suits to a plastic fiber ● High-speed response : –3dB modulation of | PANASONIC 松下 | |||
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS TIP140,TIP141,TIP142 -->NPN TIP145,TIP146,TIP147 ---> PNP . . . designed for general–purpose amplifier and low frequency switching applications. • High DC Current Gain — Min hFE = 1000 @ IC = 5 A, VCE = 4 V • Collector–Emitter Sustaining Voltage — @ 30 mA VCEO(sus) = 60 Vdc (Min) — TIP140, | MOTOROLA 摩托罗拉 | |||
DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS Darlington Complementary Silicon Power Transistors Designed for general−purpose amplifier and low frequency switching applications. Features • High DC Current Gain − Min hFE = 1000 @ IC = 5.0 A, VCE = 4 V • Collector−Emitter Sustaining Voltage − @ 30 mA | ONSEMI 安森美半导体 | |||
POWER TRANSISTORS(10A,60-100V,80W) DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS . . . designed for general-purpose amplifier and low speed switching applications. 10 AMPERE DARLINGTIOON COM:EMEMTARY SILICON POWER TRANSISTORS 60 - 100 VOLTS 80 WATTS TIP140T,TIP141T,TIP142T -->NPN TIP145T,TIP146T,TIP147T ---> PNP | MOSPEC 统懋 |
SFT145产品属性
- 类型
描述
- Pb-free:
Pb
- Halide free:
H
- Status:
Active
- Channel Polarity:
N-Channel
- Configuration:
Single
- V(BR)DSS Min (V):
250
- VGS Max (V):
30
- VGS(th) Max (V):
4.5
- ID Max (A):
3
- PD Max (W):
26
- RDS(on) Max @ VGS = 10 V(mΩ):
2400
- Qg Typ @ VGS = 4.5 V (nC):
6
- Qg Typ @ VGS = 10 V (nC):
4.2
- Ciss Typ (pF):
210
- Package Type:
DPAK-3/TO-252-3
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
onsemi |
25+ |
TP-FA |
7734 |
样件支持,可原厂排单订货! |
|||
onsemi |
25+ |
TP-FA |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
ONSEMI/安森美 |
25+ |
TO-252 |
39229 |
ONSEMI/安森美全新特价SFT1450-TL-E即刻询购立享优惠#长期有货 |
|||
ON/安森美 |
23+ |
NA |
18500 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
|||
ON/安森美 |
2450+ |
TO252 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
ON/安森美 |
22+ |
N/A |
18500 |
现货,原厂原装假一罚十! |
|||
ON/安森美 |
22+ |
TO-252 |
20000 |
只做原装 品质保障 |
|||
ONSEMI |
18+ |
392 |
全新 发货1-2天 |
||||
ON |
26+ |
原厂原封装 |
86720 |
代理授权原装正品价格最实惠 本公司承诺假一赔百 |
|||
三年内 |
1983 |
只做原装正品 |
SFT145规格书下载地址
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2019-5-6SG1503T-精密2.5伏参考...
描述 这种单片集成电路是一个完全独立的精密电压参考发生器,内部装饰为± 1%的准确度。需要较少比静态电流为2mA,这种装置可以提供10mA的过剩的总负载和线路引起的误差小于0.5%。另外本计画为电压精度,实现了内部修整温度系数的输出电压通常为10 ppm的/° C的因此,这些提法应用关键仪器和D很好的选择到一个转换器系统。该SG1503规定工作在整个军事环境温度范围-55 ° C至125 ° C,而在SG2503是专为-25 ° C至85 ° C和0℃的商业应用SG3503至70℃ 特征 ·输出电压调整到±1% ·输入电压范围
2013-3-15
DdatasheetPDF页码索引
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