General-Purpose Switching Device Applications

General-Purpose Switching Device Applications Features • Motor drive application. • Low ON-resistance. • 4V drive.

N-Channel Power MOSFET 35V, 11A, 25m, Single TP/TP-FA

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

Power MOSFET

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

Power MOSFET 35V 11A 25mOhm Single N-Channel DPAK

This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimizegate charge and low on resistance. This devices is suitable for applications with low gate charge driving or low on resistance requirements. Low On-Resistance\nImproves efficiency by reducing conduction losses\nHigh Speed Switching\nReduces dynamic power losses\nLow Gate Charge\nEase of drive, faster turn-on\nESD Diode - Protected Gate\nESD resistance\nPb-Free and RoHS Compliance\nEnvironment friendliness;

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 35V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

Power MOSFET

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

N-Channel Power MOSFET 35V, 11A, 25m, Single TP/TP-FA

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current -ID= 11A@ TC=25℃ ·Drain Source Voltage -VDSS= 35V(Min) ·Static Drain-Source On-Resistance -RDS(on) = 25mΩ(Max)@VGS= 10V DESCRIPTION ·DC-to-DC Converter ·General Industrial Applications ·Power Motor Control

N-Channel Power MOSFET 35V, 11A, 25m, Single TP/TP-FA

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

Power MOSFET

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

Power MOSFET

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

Power MOSFET

Power MOSFET 35V, 25mΩ,11A, Single N-Channel Features • Low On-Resistance • High Speed Switching • Low Gate Charge • ESD Diode-Protected Gate • Pb-free and RoHS Compliance

CASE 463-01, STYLE 1 SOT-416/SC-90

Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transi

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

NPN SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

High Voltage Operational Amplifier

文件：228.44 Kbytes Page：12 Pages

High Voltage Operational Amplifier

文件：228.44 Kbytes Page：12 Pages