20 A, 60 V Silicon Controlled Rectifier

• High Surge Current\n• High On State Current\n• High Frequency up to 400 Hz operation\n• Anode Common to Case\n• Hermetically Sealed\n• Replacement for part number 2N884 thru 2N889 and 2N876 thru 2N881 devices\n• TX, TXV, S-Level Screening Available;

20 AMPS 15 - 200 VOLTS SILICON CONTROLLED RECTIFIER

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Silicon PIN Diode

●Current-controlled RF resistor for switching and attenuating applications ●Frequency range above 1 MHz ●Designed for low IM distortion

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : R ● on=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity

Low-Noise, Low-Dropout, 150mA Linear Regulators in SOT23

General Description The MAX8867/MAX8868 low-noise, low-dropout linear regulators operate from a 2.5V to 6.5V input and deliver up to 150mA. Typical output noise for these devices is just 30µVRMS, and typical dropout is only 165mV at 150mA. The output voltage is preset to voltages in the range o

MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications    

MOSMIC for TV-Tuner Prestage with 12 V Supply Voltage

Features • Integrated gate protection diodes • Low noise figure • High gain • Biasing network on chip • Improved cross modulation at gain reduction • High AGC-range • SMD package • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications