25 A, 300 V Fast Switching Silicon Controlled Rectifier

• Low-Level Gate Characteristics\n• IGT = 200 µA (Max) @ 25°C\n• Low Holding Current IH = 1 mA (Max) @ 25°C\n• Anode Common to Case\n• Hermetically Sealed\n• TX, TXV, S-Level Screening Available;

25 AMPS 100 ??400 VOLTS FAST SWITCHING SILICON CONTROLLED RECTIFIER

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25 A, 300 V Fast Switching Silicon Controlled Rectifier

• Low-Level Gate Characteristics\n• IGT = 200 µA (Max) @ 25°C\n• Low Holding Current IH = 1 mA (Max) @ 25°C\n• Anode Common to Case\n• Hermetically Sealed\n• TX, TXV, S-Level Screening Available;

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Complementary Transistors High Voltage Driver

Features: • High Current Capacity: IC = 2A • High Breakdown Voltage: VCEO = 400V Min

SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 25.0 Ampere)

VOLTAGE 20 to 100 Volts CURRENT 25 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. • Low forwrd v

ISOLATION SCHOTTKY BARRIER RECTIFIERS(VOLTAGE- 20 to 100 Volts CURRENT - 25.0 Ampere)

VOLTAGE- 20 to 100 Volts CURRENT - 25.0 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O. Flame Retardant Epoxy Molding Compound. • Exceeds environmental standards of MIL-S-19500/228 • Low power loss, high efficiency. •