Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ν Lower RDS(ON) : 0.106 Ω (Typ.)

P-channel Enhancement Mode Power MOSFET

Features  VDS= -60V, ID= -20A RDS(ON)

INSULATED PC SPACERS/SUPPORTS

INSULATED PC SPACERS / SUPPORTS • Board will be electrically insulated, eliminates need for insulating washers • Easy snap-in assembly • No tool required for installation • Designed for .062(1.57) thick boards • One piece design eliminates the need for additional screws and nuts • Slim desig

Power MOSFET Avalanche Guideline

文件：377.76 Kbytes Page：7 Pages

Snap Rivets

文件：152.09 Kbytes Page：2 Pages

Snap Rivets – continued

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Snap Rivets

文件：152.09 Kbytes Page：2 Pages