Advanced Power MOSFET

BVDSS = -250 V RDS(on) = 4.0 Ω ID = -1. 6 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : -10 µA (Max.) @ VDS = -250V ● Low RDS(ON) : 3.5 Ω (Typ.)

Advanced Power MOSFET

NECs HIGH NOISE REDUCTION HIGH SPEED DIGITAL OUTPUT TYPE 8 PIN DIP OPTOCOUPLER

DESCRIPTION NECs PS9614 and PS9614L are optically coupled isolators containing a GaAIAs LED on the light emitting diode (input) side and a photodiode and a signal procesing circuit on the detector (output) side on one chip. The PS9614 is in a plastic DIP (Dual In-line Package) and the PS9614L is

Advanced Power MOSFET

FEATURES ν Avalanche Rugged Technology ν Rugged Gate Oxide Technology ν Lower Input Capacitance ν Improved Gate Charge ν Extended Safe Operating Area ν Lower Leakage Current : 10 µA (Max.) @ VDS = -250V ν Low RDS(ON) : 3.5 Ω (Typ.)

THYRISTOR MODULES THYRISTOR/THYRISTOR MODULES

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Advanced Power MOSFET

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Audio processor for VHS hi-fi and linear audio

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