型号 功能描述 生产厂家 企业 LOGO 操作

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175oC Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.912 Ω (Typ.)

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175oC Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.225 Ω (Typ.)

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● 175°C Operating Temperature ● Lower Leakage Current : 10 µA (Max.) @ VDS = -100V ● Low RDS(ON) : 0.161 Ω (Typ.)

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -200V ■ Low RDS(ON) : 0.581 Ω (Typ.)

Fairchild

仙童半导体

Advanced Power MOSFET

BVDSS = -200 V RDS(on) = 0.5 W ID = -11 A FEATURES ● Avalanche Rugged Technology ● Rugged Gate Oxide Technology ● Lower Input Capacitance ● Improved Gate Charge ● Extended Safe Operating Area ● Lower Leakage Current : 10 mA (Max.) @ VDS = -200V ● Low RDS(ON) : 0.344 W (Typ.)

Fairchild

仙童半导体

P-CHANNEL POWER MOSFET

FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = -250V ■ Low RDS(ON) : 0.549 Ω (Typ.)

Fairchild

仙童半导体

Advanced Power MOSFET

FEATURES ❐ Avalanche Rugged Technology ❐ Rugged Gate Oxide Technology ❐ Lower Input Capacitance ❐ Improved Gate Charge ❐ Extended Safe Operating Area ❐ 175oC Operating Temperature ❐ Lower Leakage Current : 10 µA (Max.) @ VDS = -60V ❐ Low RDS(ON) : 0.106 Ω (Typ.)

Fairchild

仙童半导体

isc P-Channel MOSFET Transistor

文件:275.03 Kbytes Page:2 Pages

ISC

无锡固电

Advanced Power MOSFET

文件:228.12 Kbytes Page:7 Pages

Fairchild

仙童半导体

isc P-Channel MOSFET Transistor

文件:274.92 Kbytes Page:2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

文件:274.43 Kbytes Page:2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

文件:274.77 Kbytes Page:2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

文件:275.23 Kbytes Page:2 Pages

ISC

无锡固电

isc P-Channel MOSFET Transistor

文件:275.47 Kbytes Page:2 Pages

ISC

无锡固电

SFI9产品属性

  • 类型

    描述

  • 型号

    SFI9

  • 制造商

    FAIRCHILD

  • 制造商全称

    Fairchild Semiconductor

  • 功能描述

    Advanced Power MOSFET

更新时间:2025-12-29 23:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
FAIRCHILD/仙童
24+
NA/
4250
原厂直销,现货供应,账期支持!
onsemi(安森美)
24+
I2PAK(TO262)
7350
现货供应,当天可交货!免费送样,原厂技术支持!!!
FAIRCHILD/仙童
22+
TO-262
100000
代理渠道/只做原装/可含税
FSC/ON
23+
原包装原封□□
30000
原装进口特价供应特价,原装元器件供应,支持开发样品更多详细咨询库存
CHINAXYJ
23+
0603L
9868
专做原装正品,假一罚百!
仙童
06+
TO-262
2500
原装
FAIRCHILD/仙童
21+
TO-262
10000
原装现货假一罚十
24+
8000
24+
TO-262
6430
原装现货/欢迎来电咨询
SUMIDA
24+
原厂封装
2678
原装现货假一罚十

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