GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm

GaAlAs INFRARED EMITTER

GaAlAs Infrared Emitters (880 nm)

• GaAIAs infrared emitting diode, fabricated in a\n   liquid phase epitaxy process\n• Anode is electrically connected to the case\n• High reliability\n• Matches all Si-Photodetectors\n• Hermetically sealed package\n• SFH 480: Same package as SFH 216\n• SFH 481: Same package as BPX 43\n• SFH 482: Sam;

GaAlAs Infrared Emitters (880 nm)

● GaAIAs infrared emitting diode, fabricated in\n   a liquid phase epitaxy process\n● Anode is electrically connected to the case\n● High reliability\n● Matches all Si-Photodetectors\n● Hermetically sealed package\n● SFH 480: Same package as SFH 216\n● SFH 481: Same package as BPX 43, BPY 63\n● SFH ;

GaAlAs-Lumineszenzdioden

文件：103.53 Kbytes Page：9 Pages

GaAlAs INFRARED EMITTER

GaAlAs INFRARED EMITTER

GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm

GaAlAs INFRARED EMITTER

GaAlAs-IR-Lumineszenzdioden 880 nm GaAlAs Infrared Emitters 880 nm

GaAlAs INFRARED EMITTER

GaAlAs-Lumineszenzdioden

文件：103.53 Kbytes Page：9 Pages

GaAlAs-Lumineszenzdioden

文件：103.53 Kbytes Page：9 Pages

GaAlAs-Lumineszenzdioden

文件：103.53 Kbytes Page：9 Pages

NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

丝印代码：P6；NPN wideband transistor

DESCRIPTION NPN double polysilicon wideband transistor with buried layer for low voltage applications in a 4-pin dual-emitter SOT343R plastic package. FEATURES • High power gain • High efficiency • Low noise figure • High transition frequency • Emitter is thermal lead • Low feedback capaci

Silicon NPN Transistor RF Power Output for Broadband Amp, PO = 40W @ 512MHz

Description: The NTE480 is a 12.5 Volt epitaxial silicon NPN common emitter transistor designed for broadband applications in the 450 to 512MHz land mobile radio band. This device utilizes diffused emitter resistors to withstand infinite VSWR under operating conditions. Features: • Desi

Metal Oxide Varistors (MOV)

Description: The NTE Metal Oxide Varistors feature a barrier layer that gives the user fast response time. These devices have a high transient current handling capability when high voltage is applied. Static resistance is, however, very high under low voltage conditions, permitting low standby

Shottky barrier diode

Features High reliability Small mold type Low VF Application Small current rectification