GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter

Features ● GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process ● High reliability ● High radiant intensity ● High pulse handling capability ● Available in groups ● Same package as SFH 305 Applications ● Miniature photointerrupters ● Punched tape-readers ● Industria

GaAs Infrared Emitter

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GaAs-IR-Lumineszenzdiode

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High Power Infrared Emitter (850 nm)

Features: • Very small package: (LxWxH) 1.7 mm x 0.8 mm x 0.65 mm • Short switching times • High optical total power Applications • Miniature photointerrupters • Industrial electronics • For control and drive circuits • Sensor technology • Alarm and safety equipment • Not for new designs

IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

Features: • Very small package: (LxWxH) 3.2 mm x 1.6 mm x 1 mm • High optical total power • UL version available ( ordering code & test conditions on request) Applications • Miniature photointerrupters • Mobile devices • Proximity sensor • For control and drive circuits

Chip LED Lens High Power Infrared Emitter (850 nm)

Features: —Package: black epoxy —ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) —High optical power —Double stack emitter —Very small SMT package —Reverse mount

Chip LED Lens High Power Infrared Emitter (850 nm)

Features: —Package: black epoxy —ESD: 2 kV acc. to ANSI/ESDA/JEDEC JS-001 (HBM, Class 2) —High optical power —Double stack emitter —Very small SMT package —Reverse mount

GaAs-IR-Lumineszenzdiode

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High Power Infrared Emitter

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High Power Infrared Emitter

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High Power Infrared Emitter (850 nm)

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CHIPLED with High Power Infrared Emitter (850 nm)

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Miniature photointerrupters

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High Power Infrared Emitter

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High Power Infrared Emitter

文件：431.59 Kbytes Page：14 Pages

High Power Infrared Emitter

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IR-Lumineszenzdiode (850 nm) mit hoher Ausgangsleistung

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Emitters and Detectors for Infrared (IR) Touchscreens

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High Power Infrared Emitter

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High Power Infrared Emitter

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Electronic Equipment

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Electronic Equipment

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High Power Infrared Emitter

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Emitters and Detectors for Infrared (IR) Touchscreens

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High Power Infrared Emitter

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High Power Infrared Emitter (850 nm)

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High Power Infrared Emitter

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DC axial compact fan

DC axial compact fan ebm-papst St. Georgen GmbH & Co. KG Hermann-Papst-Straße 1 D-78112 St. Georgen Phone +49 7724 81-0 Fax +49 7724 81-1309 info2@de.ebmpapst.com www.ebmpapst.com

Surface Mount Quartz Crystal

DESCRIPTION The Model 405 is a ceramic packaged Crystal offering reduced size, ideal for high-density circuit board applications. The Model 405 offers reliable precision and excellent shock performance in wireless telecommunication devices. FEATURES • Standard 5.0x3.2mm Surface Mount Footprint

NPN Silicon RF Transistor

DESCRIPTION The START405 is a member of the START family that provide the state of the art of RF silicon process to the market. Manufacturated in the third generation of ST proprietary bipolar process, it offers the best mix of gain and NF for given breakdown voltage(BVceo). It offers performa

DC axial fans

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Replace “XX” with 01 through 12 for number of poles 11/16 (.688) pitch

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