NPN-Si-Fototransistor mit V貫 Charakteristik

Features: • Package: Smart DIL • Especially suitable for applications from 350 nm to 970 nm • Adapted to human eye sensitivity (Vλ) • SMT package without base connection, suitable for IR reflow soldering • Only available on tape and reel Applications • For control and drive circuits • Expo

OSRAM Smart DIL, SFH 3410

NPN-Si-Fototransistor mit V貫 Charakteristik

Features: • Package: Smart DIL • Especially suitable for applications from 350 nm to 970 nm • Adapted to human eye sensitivity (Vλ) • SMT package without base connection, suitable for IR reflow soldering • Only available on tape and reel Applications • For control and drive circuits • Expo

NPN-Si-Fototransistor mit V貫 Charakteristik

Features: • Package: Smart DIL • Especially suitable for applications from 350 nm to 970 nm • Adapted to human eye sensitivity (Vλ) • SMT package without base connection, suitable for IR reflow soldering • Only available on tape and reel Applications • For control and drive circuits • Expo

NPN-Si-Fototransistor mit V貫 Charakteristik

Features: • Package: Smart DIL • Especially suitable for applications from 350 nm to 970 nm • Adapted to human eye sensitivity (Vλ) • SMT package without base connection, suitable for IR reflow soldering • Only available on tape and reel Applications • For control and drive circuits • Expo

NPN-Si-Fototransistor mit V貫 Charakteristik

Features: • Package: Smart DIL • Especially suitable for applications from 350 nm to 970 nm • Adapted to human eye sensitivity (Vλ) • SMT package without base connection, suitable for IR reflow soldering • Only available on tape and reel Applications • For control and drive circuits • Expo

NPN-Si-Fototransistor mit V貫 Charakteristik

Features: • Package: Smart DIL • Especially suitable for applications from 350 nm to 970 nm • Adapted to human eye sensitivity (Vλ) • SMT package without base connection, suitable for IR reflow soldering • Only available on tape and reel Applications • For control and drive circuits • Expo

NPN-Si-Fototransistor mit V貫 Charakteristik

Features: • Package: Smart DIL • Especially suitable for applications from 350 nm to 970 nm • Adapted to human eye sensitivity (Vλ) • SMT package without base connection, suitable for IR reflow soldering • Only available on tape and reel Applications • For control and drive circuits • Expo

This application note introduces ambient light sensing on a general level. The different types of ambient light sensors are described and related to specific applications.

文件：395.69 Kbytes Page：8 Pages

OSRAM Smart DIL, SFH 3410R

Silicon NPN Phototransistor with V貫 Characteristics Version 1.3

文件：598.38 Kbytes Page：12 Pages

200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Three Phase Bridge

200 V - 1,000 V Three Phase Bridge 18.0 A - 20.0 A Forward Current 70 ns - 3000 ns Recovery Time

Heyco® PG and Metric Threaded Plugs

文件：114.81 Kbytes Page：1 Pages

Round Snap-In Aluminum Electrolytic Capaci-

文件：243.67 Kbytes Page：5 Pages

3/8 Square Drive Sockets, SAE

文件：158.63 Kbytes Page：3 Pages