Silicon NPN Phototransistor Version 1.3

Features: • Spectral range of sensitivity: (typ) 740 1080 nm • Package: 5mm Radial (T 1 ¾), Epoxy • Special: High linearity Applications • Computer-controlled flashes • Photointerrupters • Industrial electronics • For control and drive circuits

.Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor

Features ●Especially suitable for applications from 460 nm to 1080 nm (SFH 314) and of 880 nm (SFH 314 FA) ●High linearity ●5 mm plastic package Applications ●Computer-controlled flashes ●Photointerrupters ●Industrial electronics ●For control and drive circuits

OSRAM Radial T1 3/4, SFH 314 FA

硅NPN光电三极管

.Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor

Features ●Especially suitable for applications from 460 nm to 1080 nm (SFH 314) and of 880 nm (SFH 314 FA) ●High linearity ●5 mm plastic package Applications ●Computer-controlled flashes ●Photointerrupters ●Industrial electronics ●For control and drive circuits

.Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor

Features ●Especially suitable for applications from 460 nm to 1080 nm (SFH 314) and of 880 nm (SFH 314 FA) ●High linearity ●5 mm plastic package Applications ●Computer-controlled flashes ●Photointerrupters ●Industrial electronics ●For control and drive circuits

Low-voltage stabistor

DESCRIPTION Low-voltage stabilization diode in a hermetically-sealed SOD27 (DO-35) glass package. FEATURES • Low-voltage stabilization • Forward voltage range: 610 mV to 940 mV • Total power dissipation: max. 400 mW. APPLICATIONS • Low-voltage stabilization e.g. – Bias

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

丝印代码：H04；Digital transistors (built-in resistor)

600mA/ 15V Digital transistors(with built-in resistors) Features In addition to the features ofregular digital transistors, 1) Low saturation voltage, typically VCE(sat)=40mVat IC/IB=50mA/2.5mA, makes these transistors ideal for muting circuits. 2) Thesetransistors can be usedat hig

RF POWER TRANSISTORS NPN SILICON

The RF Line NPN Silicon RF Power Transistors . . . designed primarily for wideband large–signal driver and output amplifier stages in the 30–200 MHz frequency range. • Guaranteed Performance at 150 MHz, 28 Vdc Output Power = 30 Watts Minimum Gain = 10 dB • 100 Tested for Load Mismatch