WITH FILTER SILICON PHOTODIODE VERY LOW DARK CURRENT

DESCRIPTION The SFH 263 is a silicon photodiode fabricated in planar technology. The N-Si material used results in a positive front and negative back contact. These photodetectors are suitable for diode operation (with reverse voltage) as well as for element operation. Applications include expos

WITH FILTER SILICON PHOTODIODE VERY LOW DARK CURRENT

DESCRIPTION The SFH 263 is a silicon photodiode fabricated in planar technology. The N-Si material used results in a positive front and negative back contact. These photodetectors are suitable for diode operation (with reverse voltage) as well as for element operation. Applications include expos

SMALL OUTLINE OPTOISOLATORS DARLINGTON OUTPUT NO BASE CONNECTION

Small Outline Optoisolators Darlington Output (No Base Connection) These devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector, in a surface mountable, small outline, plastic package. No base connection for improved noise

Silicon Complementary Transistors Darlington Power Amplifier

Description: The NTE263 (NPN) and NTE264 (PNP) are complementary silicon Darlington power transistors in a TO220 type package designed for general purpose amplifier and low–speed switching applications. Features: • High DC Current Gain: hFE = 2500 Typ (NTE263) = 3500 T

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

SILICON TRIACS

SILICON TRIACS ● High Current Triacs ● 25 A RMS ● Glass Passivated Wafer ● 400 V to 800 V Off-State Voltage ● 175 A Peak Current ● Max IGT of 50 mA (Quadrants 1 - 3)

Darlington Phototransistor

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