Silicon PIN Photodiode

Features: • Wavelength range (S10) 750 nm to 1100 nm • Short switching time (typ. 5 ns) • 5 mm LED plastic package Applications • High speed photointerrupters • Industrial electronics • For control and drive circuits

Neu: Silizium-PIN-Fotodiode mit sehr kurzer Schaltzeit New: Silicon PIN Photodiode with Very Short Switching Time

Features ● Especially suitable for applications from 400 nm to 1100 nm (SFH 213) and of 880 nm (SFH 213 FA) ● Short switching time (typ. 5 ns) ● 5 mm LED plastic package ● Also available on tape Applications ● Industrial electronics ● For control and drive circuits ● Photointerrupters

OSRAM Radial T1 3/4, SFH 213 FA

PIN 硅光电二极管

Amlifier Transistors (PNP)

Amplifier Transistors PNP Silicon

丝印代码：D213；DUAL CHANNEL SMALL OUTLINE OPTOISOLATOR TRANSISTOR OUTPUT

This device consists of two gallium arsenide infrared emitting diodes optically coupled to two monolithic silicon phototransistor detectors, in a surface mountable, small outline, plastic package. It is ideally suited for high density applications and eliminates the need for through–the–board moun

Germanium PNP Transistor High Power, High Gain Amplifier

Description: The NTE213 is a germanium PNP power transistor in a TO36 type package designed high–power, high–gain applications in high–reliability industrial equipment.

TRISILTM

DESCRIPTION The SMTPBxx series has been designedto protect telecommunication equipment against lightning and transient induced by AC power lines. FEATURES BIDIRECTIONAL CROWBAR PROTECTION. BREAKDOWNVOLTAGE RANGE: From 62 V To 270 V. HOLDING CURRENT: IH= 150 mA min REPETITIVE PE

1024- 횞 512-pixel ccd image sensor

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