P-Channel MOSFET

SFD25N06BT采用稳先微电子先进的高密度沟槽技术制造，是具有高电流处理能力的绿色环保表面贴装封装器件，可广泛应用于开关电源等应用。 60V, 25A \nRDS(ON) =32mΩ (Max.) @ VGS = 10V, ID = 10A \n100%EAS保证\n绿色环保\n超低导通电阻\n良好的CdV/dt效应下降\n先进的高密度沟槽技术;

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

25A, 60V, 0.047 Ohm, N-Channel Power MOSFETs

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching reg

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR

N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ■ TYPICAL RDS(on) = 0.048 Ω ■ AVALANCHE RUGGED TECHNOLOGY ■ 100 AVALANCHE TESTED ■ REPETITIVE AVALANCHE DATA AT 100°C ■ LOW GATE CHARGE ■ HIGH CURRENT CAPABILITY ■ 175°C OPERATING TEMPERATURE ■ APPLICATION ORIENTED CHARACTERIZATION APPLICA

POWER MOS FIELD EFFECT TRANSISTORS

文件：235.65 Kbytes Page：4 Pages

POWER MOS FIELD EFFECT TRANSISTORS

文件：235.65 Kbytes Page：4 Pages