| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SF2060B | 115.18 MHz SAW Filter 115.18 MHz SAW Filter • Designed for SDARS Receiver IF Application • Low Insertion Loss • 5.0 X 7.0 mm Surface-Mount Case • Differential Input and Output • Complies with Directive 2002/95/EC (RoHS) | MURATA 村田 |   | |
SF2060B | Designed for SDARS Receiver IF Application 115.18 MHz SAW Filter • Designed for SDARS Receiver IF Application • Low Insertion Loss • 5.0 X 7.0 mm Surface-Mount Case • Differential Input and Output • Complies with Directive 2002/95/EC (RoHS) | RFM | | |
Designed for SDARS Receiver IF Application 115.18 MHz SAW Filter • Designed for SDARS Receiver IF Application • Low Insertion Loss • 5.0 X 7.0 mm Surface-Mount Case • Differential Input and Output • Complies with Directive 2002/95/EC (RoHS) | RFM | | ||
115.18 MHz SAW Filter 115.18 MHz SAW Filter • Designed for SDARS Receiver IF Application • Low Insertion Loss • 5.0 X 7.0 mm Surface-Mount Case • Differential Input and Output • Complies with Directive 2002/95/EC (RoHS) | MURATA 村田 | | ||
Super Fast Rectifier 文件：173.99 Kbytes Page：3 Pages | BILIN 银河微电 | | ||
20A,600V,Super Fast Rectifiers | GALAXY 银河微电 | | ||
SWITCHMODE??Power Rectifiers SWITCHMODE™ Power Rectifiers . . . using the Schottky Barrier principle with a platinum barrier metal. These state–of–the–art devices have the following features: • 20 Amps Total (10 Amps Per Diode Leg) • Guard–Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temper | MOTOROLA 摩托罗拉 | | ||
SWITCHMODE??Schottky Power Rectifirer SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers | MOTOROLA 摩托罗拉 | | ||
SWITCHMODE??Schottky Power Rectifirer SWITCHMODE Schottky Power Rectifier The SWITCHMODE Power Rectifier employs the Schottky Barrier principle in a large area metal–to–silicon power diode. State–of–the–art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for use as rectifiers | MOTOROLA 摩托罗拉 | | ||
QUAD OPERATIONAL AMPLIFIER? 文件：231.91 Kbytes Page：6 Pages | NJRC 日本无线 | | ||
QUAD OPERATIONAL AMPLIFIER? 文件：231.91 Kbytes Page：6 Pages | NJRC 日本无线 | |
SF2060B产品属性
- 类型
描述
- AEC Qualified：
NO
- Pb Free：
YES
- Halide free：
YES
- Reach：
YES
- RoHS：
YES
- Marketing Status：
Active
- Configuration：
Dual
- VRRM(V)max.：
600
- IF(A)max.：
20
- VF (V)max：
1.7
- IFSM(A)max.：
150
- IR(uA)max.：
10
- trr(ns)max：
50
- TJ(°C)max.：
150
- TJ(°C)min.：
-55
- ECCN(US)：
EAR99
- Category：
快恢复二极管
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Murata Electronics |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
SF2060B规格书下载地址
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