SUPER FAST GLASS PASSIVATED RECTIFIER

FEATURES • Super fast switching speed • Glass passivated chip junction • Low power loss, high efficiency • Low leakage • High surge capacity • High temperature soldering guaranteed 250℃/10 second, 0.16″(4.06mm) lead length • Also available with common Anode, add an “A” suffix, i.e. SF161CA,

Super Fast Rectifiers

SUPER FAST RECTIFIERS

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GLASS PASSIVATED SUPER FAST RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 16 Amperes)

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GLASS PASSIVATED SUPER FAST RECTIFIER VOLTAGE RANGE 50 to 600 Volts CURRENT 16 Amperes

FEATURES * Low switching noise * Low forward voltage drop * Low thermal resistance * High current capability * Super fast switching speed * High reliability * Good for switching mode circuit

GLASS PASSIVATED SUPER FAST RECTIFIER

Features • Low forward voltage drop • Low reverse leakage current • Superfast switching time for high efficiency • High current capability • High surge current capability

GLASS PASSIVATED SUPER FAST RECTIFIER

Features • Low forward voltage drop • Low reverse leakage current • Superfast switching time for high efficiency • High current capability • High surge current capability

GLASS PASSIVATED SUPER FAST RECTIFIER

Features • Low forward voltage drop • Low reverse leakage current • Superfast switching time for high efficiency • High current capability • High surge current capability

GLASS PASSIVATED SUPER FAST RECTIFIER (VOLTAGE RANGE 50 to 400 Volts CURRENT 16 Amperes)

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GLASS PASSIVATED SUPER FAST RECTIFIER

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快速整流管

快速整流管

GaAs Infrared Light Emitting Diode

GaAs Infrared Light Emitting Diode For optical control systems Features ● High-power output, high-efficiency : PO = 3.5 mW (typ.) ● Infrared light emission close to monochromatic light : λP = 950 nm (typ.) ● Small ceramic package

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

Silicon MOS IC

Silicon NPN Transistor TV Vertical Deflection

Description: The NTE162 is an NPN transistor in a TO3 type case designed for medium–to–high voltage inverters, converters, regulators, and switching circuits. Features: • High Voltage: VCEX = 400V • Gain Specified to 3.5A • High Frequency Response to 2.5MHz

POWER TRANSISTORS(10A,320-380V,125W)