AlGaAs Infrared Emitting Diode

DESCRIPTION The SE3470/5470 series consists of aluminum gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3470 series has flat window cans providing a wide beam angle, while the SE5470 series has glass lensed cans providing a narrow beam angle. These devices typ

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

Infrared Sensors Line Guide

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SE5470-003 - 红外发射器, 金属Can, 20 °, TO-46, 100 mA, 1.9 V, 700 ns, 700 ns

The SE5470-003 is an aluminium gallium arsenide Infrared Emitting Diode mounted in a metal can package. It has glass lensed cans providing a narrow beam angle. This device typically exhibit 70% greater power output than gallium arsenide devices at the same forward current. The package offers hig ·Higher output power than GaAs at equivalent drive currents\n·Ideal for high pulsed current applications;

封装/外壳：TO-46-2，金属罐 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 880NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

封装/外壳：TO-46-2，金属罐 包装：卷带（TR）剪切带（CT） 描述：EMITTER IR 880NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

AlGaAs Infrared Emitting Diode

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SE Series AlGaAs Infrared Emitting Diode, TO-46 Metal Can Package

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Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output

Description The CA5470 is an operational amplifier that combines the advantages of both high speed CMOS and bipolar transistors on a single monolithic chip. It is constructed in the BiMOS-E process which adds drain-extension implants to 3µm polygate CMOS, enhancing both the voltage capability and

Quad, 14MHz, Microprocessor BiMOS-E Operational Amplifier with MOSFET Input/Bipolar Output

Description The CA5470 is an operational amplifier that combines the advantages of both high speed CMOS and bipolar transistors on a single monolithic chip. It is constructed in the BiMOS-E process which adds drain-extension implants to 3µm polygate CMOS, enhancing both the voltage capability and

Silicon Controlled Rectifier (SCR) 5 Amp

Description: The NTE5470 through NTE5476 are multi–purpose PNPN silicon controlled rectifiers in a TO64 type stud mount package suitable for industrial and consumer applications. Features: • Uniform Low–Level Noise–Immune Gate Triggering • Low Forward “ON” Voltage • High Surge–Cur

AND-GATED J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH PRESET AND CLEAR

文件：144.76 Kbytes Page：5 Pages

AND-GATED J-K POSITIVE-EDGE-TRIGGERED FLIP-FLOPS WITH PRESET AND CLEAR

文件：144.76 Kbytes Page：5 Pages