Description

The CA5470 is an operational amplifier that combines the advantages of both high speed CMOS and bipolar transistors on a single monolithic chip. It is constructed in the BiMOS-E process which adds drain-extension implants to 3µm polygate CMOS, enhancing both the voltage capability and providing vertical bipolar transistors for broadband analog/digital func tions. This process lends itself easily to high speed operational amplifiers, comparators, analog switches and interface periph erals, resulting in twice the speed of the conventional CMOS transistors having similar feature size.

Features

• High Speed CMOS Input Stage Provides

    - Very High ZI . . . . . . . . . . . . . . . 5TΩ (5 x 1012Ω) (Typ)

    - Very Low lI . . . . . . . . . . 0.5pA (Typ) at 5V Operation

    - Very Low IIO . . . . . . . . . 0.5pA (Typ) at 5V Operation

• ESD Protection to 2000V

• 3V to 16V Power Supply Operation

• Fully Guaranteed Specifications Over Full Military Range

• Wide BW (14MHz); High SR (5V/µs) at 5V Supply

• Wide VlCR Range From -0.5V to 3.7V (Typ) at 5V Supply

• Ideally Suited for CMOS and HCMOS Applications

Applications

• Bar Code Readers

• Photodiode Amplifiers (IR)

• Microprocessor Buffering

• Ground Reference Single Supply Amplifiers

• Fast Sample and Hold

• Timers

• Voltage Controlled Oscillators

• Voltage Followers

• V to l Converters

• Peak Detectors

• Precision Rectifiers

• 5V Logic Systems

• 3V Logic Systems