GaAs Infrared Emitting Diode

DESCRIPTION The SE3450/5450 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3450 series has flat window cans providing a wide beam angle, while the SE5450 series has glass lensed cans providing a narrow beam angle. The TO-46 packages offer

SE5450-013 - 红外发射器, 20 °, TO-46, 100 mA, 1.7 V, 700 ns, 700 ns

The SE5450-013 is an Infrared Emitting Diode consists of aluminum gallium arsenide mounted in a TO-46 metal can. It is ideally suitable for use with the high pulsed current applications. It is mechanically and spectrally matched to SD3421/5421 photodiode, SD3443/5443/5491 phototransistor, SD3410/541 ·150mW Power dissipation\n·-55 to 125°C Operating temperature range;

Infrared Sensors Line Guide

FEATURES REFLECTIVE SENSORS HOA1395. Features: Side-looking plastic package • Phototransistor output • Infrared emitter and phototransistor detector in a single package • Low profile for design flexibility • Designed for short-distance detection • Enhanced sensitivity • Unfocused for sensi

GaAs Infrared Emitting Diode

DESCRIPTION The SE3455/5455 series consists of a gallium arsenide infrared emitting diode mounted in a TO-46 metal can package. The SE3455 series has flat window cans providing a wide beam angle, while the SE5455 series has glass lensed cans providing a narrow beam angle. These devices are constr

封装/外壳：TO-46-2，金属罐 包装：散装 描述：EMITTER IR 935NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

封装/外壳：TO-46-2，金属罐 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 935NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

Infrared Sensors Line Guide

文件：1.02693 Mbytes Page：18 Pages

SE5455-002 - 红外线发射二极管

SE5455-003 - 红外发射器, 金属Can, 20 °, TO-46, 100 mA, 1.7 V, 700 ns, 700 ns

SE Series GaAs Infrared Emitting Diode, TO-46 Metal Can Package

文件：67.65 Kbytes Page：5 Pages

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD546 Series ● 85 W at 25°C Case Temperature ● 15 A Continuous Collector Current ● Customer-Specified Selections Available

丝印代码：20-；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

丝印代码：21*；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-

丝印代码：22*；N-channel silicon junction field-effect transistors

DESCRIPTION N-channel symmetrical silicon junction field-effect transistors in a SOT23 package. FEATURES • Low leakage level (typ. 500 fA) • High gain • Low cut-off voltage (max. 2.2 V for BF545A). APPLICATIONS • Impedance converters in e.g. electret microphones and infra-