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SDS1价格
参考价格：￥2.8473
型号：SDS100-PRU2-F09-SN00-1 品牌：Sullins 备注：这里有SDS1多少钱，2025年最近7天走势，今日出价，今日竞价，SDS1批发/采购报价，SDS1行情走势销售排行榜，SDS1报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
super- economical type digital storage oscilloscope + Bandwidth : 20MHz - 200MHz + 2-Channel + Sample rate : 100MS/s - 1GS/s + Ultra-thin body + 7 inch high resolution LCD + SCPI, and LabVIEW supported | ETCList of Unclassifed Manufacturers 未分类制造商 |   | ||
super- economical type digital storage oscilloscope + Bandwidth : 20MHz - 200MHz + 2-Channel + Sample rate : 100MS/s - 1GS/s + Ultra-thin body + 7 inch high resolution LCD + SCPI, and LabVIEW supported | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
super- economical type digital storage oscilloscope + Bandwidth : 20MHz - 200MHz + 2-Channel + Sample rate : 100MS/s - 1GS/s + Ultra-thin body + 7 inch high resolution LCD + SCPI, and LabVIEW supported | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
super- economical type digital storage oscilloscope + Bandwidth : 20MHz - 200MHz + 2-Channel + Sample rate : 100MS/s - 1GS/s + Ultra-thin body + 7 inch high resolution LCD + SCPI, and LabVIEW supported | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
super- economical type digital storage oscilloscope + Bandwidth : 20MHz - 200MHz + 2-Channel + Sample rate : 100MS/s - 1GS/s + Ultra-thin body + 7 inch high resolution LCD + SCPI, and LabVIEW supported | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
3 rd Generation 1200V/2A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3 rd Generation 1200V/2A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3 rd Generation 1200V/2A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/3A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High s peed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/3A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3 rd Generation 1200V 5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/5A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perfo rmance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
5th Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/10 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/10A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/15A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/15A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/15A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
5th Generation 1200V/15A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/20A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery H igh speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/20A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/20A SiC Schottky Barrier Diode Revo lutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range fro m 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
5th Generation 1200V/20A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/2 7 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 120 0 V/ 3 0 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/30A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3 rd Generation 1200V/ 30 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
5th Generation 1200V/30A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/40A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3 rd Generation 120 0V/ 40 A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/40A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching perf ormance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
5th Generation 1200V/40A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
5th Generation 1200V/40A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/50A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Car bide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/50A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/60A SiC Schottky Barrier Diode Revolutionary semiconductor material - Silicon Carbide (SiC) No reverse recovery High-speed switching performance Temperature-independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from -55℃ to 175℃ RoHS compliant | SANAN 三安光电 | | ||
3rd Generation 1200V/60A SiC Schottky Barrier Diode Revolutionary semiconductor material Silicon Carbide (SiC) No reverse recovery High speed switching performance Temperature independent switching behavior System cost / size savings due to reduced cooling requirements Junction temperature range from 55 to 175 RoHS compliant | SANAN 三安光电 | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | | ||
AC-DC Power Supplies • Single, Dual & Triple Outputs • Convection-cooled • 3” x 5” Footprint • High Efficiency to 85 • Open Frame, U-Channel & Covered Versions • Low Temperature Option • Optional Power Fail Detect Signal | XPPOWER | |
SDS1产品属性
- 类型
描述
- 型号
SDS1
- 制造商
Black Box Corporation
- 功能描述
33-Piece Screwdriver Set
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
COILMASTER |
23+ |
SMD |
11200 |
原厂授权一级代理、全球订货优势渠道、可提供一站式BO |
|||
KOA |
24+ |
SMD |
62300 |
一级代理/全新现货/长期供应! |
|||
KOA SPEER |
15+ROHS |
SMD |
320000 |
原装进口价格优势大量现货供应 |
|||
KOA |
24+ |
SMD |
58600 |
原装正品 特价现货(香港 新加坡 日本) |
SDS1规格书下载地址
SDS1参数引脚图相关
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- SDS-100D24
- SDS1005
- SDS1003
- SDS-10-023
- SDS-10-014
- SDS0908
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DdatasheetPDF页码索引
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