100 A, 800 V Ultrafast Recovery Rectifier

• Fast Recovery: 60nsec Maximum\n• Low Forward Voltage Drop\n• Low Reverse Leakage Current\n• Single Chip Construction\n• PIV to 1100 Volts\n• Hermetically Sealed\n• For High Efficiency Applications\n• TX, TXV, and S-Level Screening Available;

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100 AMP 50 - 1200 VOLTS 60 nsec ULTRA FAST RECTIFIER

文件：39.89 Kbytes Page：2 Pages

100AMP 500-800 VOLTS ISOLATED FLAT PACK HYPER FAST RECTIFIER

文件：187.84 Kbytes Page：2 Pages

100AMP 500-800 VOLTS ISOLATED FLAT PACK HYPER FAST RECTIFIER

文件：187.84 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

Silicon Epitaxial Planar Dual Capacitance Diode

Features • Silicon Epitaxial Planar Diode • Common cathode • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications     Tuning of separate resonant circuits, push-pull circuits in FM range, especially for car radios

Optocoupler with Phototransistor Output

DESCRIPTION The K814P/K824P/K844P consist of a phototransistor optically coupled to 2 gallium arsenide infrared emitting diodes (reverse polarity) in 4-pin (single); 8 pin (dual) or 16-pin (quad) plastic dual inline package. The elements are mounted on one leadframe providing a fixed distance b

Dual Channel Detector

Two seperate elements, size 1,5x1,5 Individual spectral window for each element Designed for Gas Analysis applications The LHi 814 pyroelectric infrared-detector series is specially designed for gas analysis and monitorring applications. It includes two pyroelectric elements, each ha

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)

NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC5195 FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

FEATURES • Low voltage operation, low phase distortion • Low noise: NF = 1.5 dB TYP. @ VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz • Flat-lead 6-pin thin-type ultra super minimold package. • Built-in 2 transistors (2 × 2SC5195)