100 A, 600 V Ultrafast Recovery Rectifier

• Fast Recovery: 60nsec Maximum\n• Low Forward Voltage Drop\n• Low Reverse Leakage Current\n• Single Chip Construction\n• PIV to 1100 Volts\n• Hermetically Sealed\n• For High Efficiency Applications\n• TX, TXV, and S-Level Screening Available;

100 AMP 50 - 1200 VOLTS 60 nsec ULTRA FAST RECTIFIER

文件：39.89 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

100A, 60nsec, 50-1100 V Ultra Fast Recovery Rectifier

文件：103.62 Kbytes Page：2 Pages

Integrated Circuit Audio Power Amplifier, 1W

Description: The NTE812 is a monolithic integrated circuit in a 14–Lead DIP type package designed for use in driver and power amplifier applications at frequencies from 50Hz to 40kHz. This device will deliver up to 1W RMS output power into an 8Ω load. The high input impedance and low standby curr

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operations which require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all “freewheel mo

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M

HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 x 2SC4227 SMALL MINI MOLD

The µPA812T has built-in 2 low-voltage transistors which are designed to amplify low noise in the VHF band to the UHF band. FEATURES • Low Noise NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • High Gain |S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA • A Small Mini M