| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SDR6006 | Ultrafast Rectifier Features: • Ultrafast Recovery: 100nsec Maximum • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed, Isolated Package providing enhanced thermal performance • Eutectic Die Attach • TX, TXV, and S Level Screening iaw MIL PRF-19500 Available • h | SSDI | ||
60A 35nsec 400 to 600 V Hyper Fast Rectifier Features: • Hyper Fast Recovery: 35nsec Maximum • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed, Isolated Package providing enhanced thermal performance • Eutectic Die Attach • TX, TXV, and S Level Screening iaw MIL PRF-19500 Available | SSDI | |||
60 A, 600 V Hyperfast Recovery Rectifier • Hyper Fast Recovery: 35nsec Maximum\n• High Surge Rating\n• Low Reverse Leakage Current\n• Low Junction Capacitance\n• Hermetically Sealed, Isolated Package Providing Enhanced Thermal Performance\n• Eutectic Die Attach\n• TX, TXV, and S Level Screening iaw MILPRF-19500 Available; | SSDI | |||
60A 35nsec 400 to 600 V Hyper Fast Rectifier Features: • Hyper Fast Recovery: 35nsec Maximum • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed, Isolated Package providing enhanced thermal performance • Eutectic Die Attach • TX, TXV, and S Level Screening iaw MIL PRF-19500 Available | SSDI | |||
60A 35nsec 400 to 600 V Hyper Fast Rectifier Features: • Hyper Fast Recovery: 35nsec Maximum • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed, Isolated Package providing enhanced thermal performance • Eutectic Die Attach • TX, TXV, and S Level Screening iaw MIL PRF-19500 Available | SSDI | |||
60A 35nsec 400 to 600 V Hyper Fast Rectifier Features: • Hyper Fast Recovery: 35nsec Maximum • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed, Isolated Package providing enhanced thermal performance • Eutectic Die Attach • TX, TXV, and S Level Screening iaw MIL PRF-19500 Available | SSDI | |||
60 A, 600 V Hyperfast Recovery Rectifier • Hyper Fast Recovery: 35nsec Maximum\n• High Surge Rating\n• Low Reverse Leakage Current\n• Low Junction Capacitance\n• Hermetically Sealed, Isolated Package Providing Enhanced Thermal Performance\n• Eutectic Die Attach\n• TX, TXV, and S Level Screening iaw MILPRF-19500 Available; | SSDI | |||
60A 35nsec 400 to 600 V Hyper Fast Rectifier Features: • Hyper Fast Recovery: 35nsec Maximum • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed, Isolated Package providing enhanced thermal performance • Eutectic Die Attach • TX, TXV, and S Level Screening iaw MIL PRF-19500 Available | SSDI | |||
60A 35nsec 400 to 600 V Hyper Fast Rectifier Features: • Hyper Fast Recovery: 35nsec Maximum • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed, Isolated Package providing enhanced thermal performance • Eutectic Die Attach • TX, TXV, and S Level Screening iaw MIL PRF-19500 Available | SSDI | |||
60A 35nsec 400 to 600 V Hyper Fast Rectifier Features: • Hyper Fast Recovery: 35nsec Maximum • High Surge Rating • Low Reverse Leakage Current • Low Junction Capacitance • Hermetically Sealed, Isolated Package providing enhanced thermal performance • Eutectic Die Attach • TX, TXV, and S Level Screening iaw MIL PRF-19500 Available | SSDI | |||
Fast Recovery Rectifier, 40A, 200ns Description: The NTE6006 through NTE6011 are fast recovery silicon rectifiers in a DO5 type package designed for special applications such as DC power supplies, inverters, converters, ultrasonic systems, choppers, low RF interference, sonar power supplies, and free wheeling diodes. A complete lin | NTE | |||
SCRs 1-70 AMPS NON-SENSITIVE GATE Features ● Electrically Isolated Packages ● High Voltage Capability - 30 - 600 Volts ● High Surge Capability - up to 950 Amps ● Glass Passivated Chip | TECCOR | |||
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and | STMICROELECTRONICS 意法半导体 | |||
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and | STMICROELECTRONICS 意法半导体 | |||
TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes from 600V to 1200V. TURBOSWITCH family, drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all ”freewheel mode” operations and is particularly suitable and | STMICROELECTRONICS 意法半导体 |
SDR6006产品属性
- 类型
描述
- Io [A]:
60.00
- trr [nsec]:
35
- Ifsm [A]:
750
- Vf typ [V]:
N/A
- Vf max [V]:
1.55
- Ir typ [µA]:
N/A
- Ir max [µA]:
100.00
- BVr min [V]:
N/A
- Package:
TO-258
SDR6006规格书下载地址
SDR6006参数引脚图相关
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