N-Channel Logic Level E nhancement Mode Field E ffect Transistor

FEATURES ● Super high dense cell design for extremely low RDS (ON). ● High power and current handling capability. ● TO-220 & T O-263 package.

N-Channel Enhancement Mode Field Effect Transistor

Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Green Device Available Description: The ADM55N03Z uses advanced trench technology and design to provide excellent RDS(ON) with l

N?륝hannel Logic Level Enhancement Mode Field Effect Transistor

Product Summary: BVDSS 30V RDSON (MAX.) 55mΩ ID 3.5A Pb‐Free Lead Plating & Halogen Free

N-Channel Logic Level E nhancement Mode Field E ffect Transistor

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N-Channel Logic Level E nhancement Mode Field E ffect Transistor

文件：415.76 Kbytes Page：5 Pages

25V N-CHANNEL ENHANCEMENT-MODE MOSFET

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