型号 功能描述 生产厂家 企业 LOGO 操作

SiC N-Channel MOSFET

FEATURES ·High blocking voltagewith low RDS(on) ·Easy to parallel and simple to drive ·Avalanche ruggedness APPLICATIONS ·Solar Inverters ·Industrial UPS ·Battery chargers ·Motor drives

ISC

无锡固电

IGBT with Reverse Blocking capability

Features ● IGBT with NPT (non punch through) structure ● reverse blocking capability independent from gate voltage - function of series diode monolithically integrated - no external series diode required - soft reverse recovery ● positive temperature coefficient of saturation vol

IXYS

艾赛斯

IGBT

Features 1200V,50A VCE(sat)(typ.)=2.1V@VGE=15V,IC=50A High speed switching Higher system efficiency Soft current turn-off waveforms Square RBSOA using NPT technology General Description NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heati

GWSEMI

唯圣电子

SiC Power MOSFET

文件:474.05 Kbytes Page:7 Pages

IXYS

艾赛斯

Kelvin Source gate connection

文件:289.35 Kbytes Page:4 Pages

IXYS

艾赛斯

更新时间:2026-1-3 10:05:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IXYS
25+
10-QFN3x3
4258
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IXYS
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65200
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8866
IXYS
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TO220AB
9000
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21368
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7800
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INTEL
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8000
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IXYS
23+
TO-220
11846
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IXYS/艾赛斯
2447
SMD
100500
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BCD
23+
TO-252
69820
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