HiPerFETTM Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilic

HiPerFET Power MOSFETs

HiPerFET™ Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Features • International standard packages • JEDECTO-264 AA,epoxymeet UL 94 V-0, flammability classification • miniBLOC, with Aluminium nitride isolation • Low RDS (on) HDMOSTM process • Rugged polysilic

isc N-Channel MOSFET Transistor

FEATURES ·Drain Current –ID= 25A@ TC=25℃ ·Drain Source Voltage- : VDSS= 800V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.35.Ω(Max)@VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive, DC-DC

HiPerFET Power MOSFETs

文件：157.32 Kbytes Page：4 Pages

HiPerFET Power MOSFETs

文件：157.32 Kbytes Page：4 Pages