Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery

Silicon Carbide Schottky Diode Switching behavior benchmark No reverse recovery

文件：1.98526 Mbytes Page：8 Pages

封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：卷带（TR） 描述：DIODE ARRAY SCHOTTKY 300V D2PAK 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Carbide Schottky Diode Switching behavior benchmark No reverse recovery

Silicon Carbide Schottky Diode Switching behavior benchmark No reverse recovery

文件：1.98526 Mbytes Page：8 Pages

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

SCHOTTKY BARRIER RECTIFIERS(20A,30-60V)

The D2PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection

Schottky Barrier Diode Silicon Epitaxial

文件：252.65 Kbytes Page：5 Pages

Fast Recovery Epitaxial Diode

文件：1.12232 Mbytes Page：9 Pages

Fast Recovery Epitaxial Diode

文件：1.12232 Mbytes Page：9 Pages