Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery

Silicon Carbide Schottky Diode Switching behavior benchmark

文件：329.76 Kbytes Page：8 Pages

封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT） 描述：DIODE ARRAY SCHOTTKY 300V TO220 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Carbide Schottky Diode Switching behavior benchmark

Silicon Carbide Schottky Diode Switching behavior benchmark

文件：329.76 Kbytes Page：8 Pages

SCHOTTKY BARRIER RECTIFIERS(20A,30-60V)

The D2PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection

Schottky Barrier Rectifiers

SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 35-60 VOLTS The I2PAK Power rectifier employs the SchottkyBarrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * LowForward Voltage. * LowSwitching noise. * High Current Capacity

SCHOTTKY BARRIER RECTIFIER

VOLTAGE RANGE 30 - 45 Volts CURRENT 20 Amperes FEATURES * Plastic package has Underwriters Laboratory Flammability Classification 94V-0 * Metal Silicon junction, majority carrier conduction * Low power loss,high efficiency * High current capability, low forward voltage drop