Silicon Carbide Schottky Diode

Silicon Carbide Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery • No temperature influence on the switching behavior • No forward recovery

Silicon Carbide Schottky Diode Switching behavior benchmark

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封装/外壳：TO-220-3 包装：卷带（TR）剪切带（CT） 描述：DIODE ARRAY SCHOTTKY 300V TO220 分立半导体产品 二极管 - 整流器 - 阵列

Silicon Carbide Schottky Diode Switching behavior benchmark

文件：329.76 Kbytes Page：8 Pages

20.0 Ampere Surface Mount Dual Series Connection Ultra Fast Recovery Rectifiers

Features ※ ThinkiSemi latest&matured process FRD/FRED ※ Low forward voltage drop ※ High current capability ※ Low reverse leakage current ※ High surge current capability Application ※ Automotive Inverters and Solar Inverters ※ Car Audio Amplifiers and Sound Device Systems ※ Plating Power S

SCHOTTKY BARRIER RECTIFIERS(20A,30-60V)

The D2PAK Power rectifier employs the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art devices have the following features: * Low Forward Voltage. * Low Switching noise. * High Current Capacity * Guarantee Reverse Avalanche. * Guard-Ring for Stress Protection

Schottky Barrier Diode Silicon Epitaxial

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Fast Recovery Epitaxial Diode

文件：1.12232 Mbytes Page：9 Pages

Fast Recovery Epitaxial Diode

文件：1.12232 Mbytes Page：9 Pages