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SDA312G

10 AMPS 5 usec STANDARD RECOVERY 3 PHASE BRIDGE ASSY

FEATURES: • Recovery: 5 :sec Maximum • 50 to 1000 V Blocking Voltage • Average Output Current 10 Amps • Low Reverse Leakage Current • Glass Passivated Rectifiers • Hermetically Sealed Discretes • Aluminum Case for Maximum Thermal Conductivity • TX and TXV Level Screening Available • Consu

SSDI

SDA312G

15 A, 1000 V Standard Recovery Three Phase Bridge Assembly

• Standard Recovery: 5 μsec Maximum\n• 1000 V Blocking Voltage\n• Average Output Current 15 Amps\n• Low Reverse Leakage Current\n• Glass Passivated Void Free Hermetically Sealed Discrete Rectifiers\n• Aluminum Case, Electrically Insulated, for Maximum Thermal Conductivity\n• TX, TXV, and Space Level;

SSDI

10 AMPS 180 - 200 nsec FAST RECOVERY 3 PHASE BRIDGE ASSY

FEATURES: • Fast Recovery: 180 -200 nsec Maximum • 50 to 1000 V Blocking Voltage • Average Output Current 10 Amps • Low Reverse Leakage Current • Glass Passivated Rectifiers • Hermetically Sealed Discretes • Aluminum Case for Maximum Thermal Conductivity • TX and TXV Level

SSDI

Sequencing Hotswap Controllers

General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro

SUTEX

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

NTE

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

STMICROELECTRONICS

意法半导体

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

STMICROELECTRONICS

意法半导体

Operational Amplifiers

文件:200.55 Kbytes Page:6 Pages

NSC

国半

SDA312G产品属性

  • 类型

    描述

  • Io [A]:

    15.00

  • trr [nsec]:

    5000

  • Ifsm [A]:

    90

  • Vf typ [V]:

    N/A

  • Vf max [V]:

    1.30

  • Ir typ [µA]:

    N/A

  • Ir max [µA]:

    5.00

  • BVr min [V]:

    N/A

  • Package:

    SDA312

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