NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI SD1477is Designed for 12.5 V, Class C High-Band Applications up to 175 MHz. FEATURES: • Internal Input Matching Network • PG= 6.0 dB at 100 W/175 MHz • Omnigold™ Metalization System

RF & MICROWAVE TRANSISTORS VHF MOBILE APPLICATIONS

RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS DESCRIPTION The SD1477 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF FM communications. This device utilizes diffused emitter resistors to withstand extremely high VSWR under rated operating

NPN SILICON RF POWER TRANSISTOR

NPN SILICON RF POWER TRANSISTORDESCRIPTION:\nThe ASI SD1477is Designed for 12.5 V, Class C High-Band Applications up to 175 MHz.\n\nFEATURES:\n• Internal Input Matching Network\n• PG= 6.0 dB at 100 W/175 MHz\n• Omnigold™ Metalization System

Trans RF BJT NPN 18V 20A 6-Pin Case M-111 Tray

封装/外壳：M111 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF TRANS NPN 18V M111 分立半导体产品 晶体管 - 双极（BJT）- 射频

RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS

文件：243 Kbytes Page：9 Pages

RF POWER BIPOLAR TRANSISTORS VHF MOBILE APPLICATIONS

文件：243 Kbytes Page：9 Pages

Integrated Circuit 2 Channel Amplifier for Headphone Use

Description: The NTE1477 is a integrated circuit in a 14–Lead DIP type package suitable for use as a headphone driving amplifier in the output amplifier of a tape deck or a tuner. Features: • Wide Operating Voltage Range • Small Pop Noise by Means of Emitter Feedback • Dual Amplif

Single and Dual Protected High Side Switches

文件：224.84 Kbytes Page：8 Pages

CRYSTAL CLOCK OSCILLATORS

文件：168.28 Kbytes Page：2 Pages

CRYSTAL CLOCK OSCILLATORS

文件：168.28 Kbytes Page：2 Pages