NPN SILICON RF POWER TRANSISTOR

DESCRIPTION: The ASI SD1134 is Designed for Class C UHF Communications FEATURES: • PG = 10 dB Typical at 470 MHz • Omnigold™ Metallization System

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION The SD1134 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. ■ 450 - 512 MHz ■ 12.5 VOLTS ■ EFFICIENCY 55 ■ COMMON EMITTER ■ PO

RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION The SD1134-05 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It with stands very high VSWR under rated operating conditions. ■ 175 MHz ■ 7.5 VOLTS ■ COMMON EMITTER ■ POUT = 0.5 W MIN. WITH 7.0 dB GAIN

VHP PORTABLE/MOBILE APPLICATIONS

DESCRIPTION The SD1134-05 is a 7.5 V epitaxial silicon NPN planar transistor designed primarily for VHF communications. It with stands very high VSWR under rated operating conditions. ■ 175 MHz ■ 7.5 VOLTS ■ COMMON EMITTER ■ POUT = 0.5 W MIN. WITH 7.0 dB GAIN

RF & MICROWAVE TRANSISTORS UHF MOBILE APPLICATIONS

DESCRIPTION The SD1135 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for UHF communications. This device utilizes improved metallization to achieve infinite VSWR at rated operating conditions. ■ 470 MHz ■ 12.5 VOLTS ■ EFFICIENCY 60 ■ COMMON EMITTER ■ POUT = 5

RF & MICROWAVE TRANSISTORS VHF PORTABLE/MOBILE APPLICATIONS

DESCRIPTION The SD1135-03 is a 7.5 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. It withstands severe mismatch under operating conditions. ■ 150 MHz ■ 7.5 VOLTS ■ COMMON EMITTER ■ POUT = 2.5 W MIN. WITH 11.0 dB GAIN

UHF POWER TRANSISTOR

DESCRIPTION SSM device type SD1136 is a 12.5 volt epitaxial silicon NPN planar transistor designed primarily for UHF communications. FEATURES ● Designed for UHF military and commercial equipment ● 10.0 watts (min.) with greater than 6.0 dB gain ● Withstands infinite VSWR under operating condi

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

[TOPAZ SEMICONDUCTOR] N-CHANNEL ENHANCEMENT-MODE D-MOS POWER FETs

Red Enhanced Bi-Cell Silicon Photodiode

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Red Enhanced Bi-Cell Silicon Photodiode

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Trans GP BJT NPN 16V 0.75A 4-Pin Case M-123

Trans GP BJT NPN 16V 1.7A 4-Pin

Trans GP BJT NPN 16V 3.4A 4-Pin

包装：盒 描述：SD113E=CONTACTOR 继电器 接触器（机电）

包装：散装 描述：SD113E=CONTACTOR 继电器 接触器（机电）

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 3 GREEN/YELLOW 2) Cable Assembly 3 Components Cabled a) Twists:

Customer Specification

Construction Diameters (In) 1) Component 1 3 X 1 COND a) Conductor 16 (65/34) AWG Bare Copper 0.059 b) Insulation 0.016 Wall, Nom. PVC/ 0.005 Wall NYLON 0.101 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 2 WHITE 3 GREEN/YELLOW 2) Cable Assembly 3 Components Cabled a) Twists:

Easy Identification and Tracing with 10-color Cable

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1/4 ENCLOSED PHONE JACKS

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POWER DIVIDERS / COMBINERS

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