6th/7th Gen Intel® CoreTM Mini-ITX

Features • 2 DDR4 2133MHz SODIMM up to 32GB • Three independent displays: DP++ + LVDS + eDP • DP++ resolution supports up to 4096x2304 @ 60Hz • Multiple expansion: 1 PCIe x16, 2 Mini PCIe • Storage: 2 SATA 3.0 • Rich I/O: 2 Intel GbE, 2 COM, 4 USB 3.0, 4 USB 2.0

RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C

RF & MICROWAVE TRANSISTORS WIDEBAND VHF-UHF CLASS C

TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE - 20 to 100 Volts

VOLTAGE RANGE - 20 to 100 Volts CURRENT - 10 Amperes FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverte

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 1 00 Volts CURRENT - 10 .0 Amperes FEATURES • Plastic package has Underwriters Laboratory Fl ammability Classification 9 4V-O • For thorough hole applications • Low profile package • Built- in strain relief • Metal to silicon rectifier majority carr

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts

VOLTAGE RANGE - 20 to 100 Volts CURRENT - 10 Amperes FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheeli

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling

10A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For thorough hole applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE 20 to 150 Volts CURRENT 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

10A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features Schottky Barrier chip Guard Ring Die Construction Low Profile Package High Surge Current Capability Low Power Loss, High Efficiency Ideal for Printed Circuit Board For Use in Low Voltage, High Frequency Inverters, Free Wheeling Applications

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For thorough hole applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction

POWER TRANSISTORS(12A,50V,40W)

NPN SILICON POWER TRANSISTOR 12 AMPERE POWER TRANSISTORS 50 VOLTS 40 WATTS

50V/15A Switching Applications

50V/15A Switching Applications Features • Low-saturation collector-to-emitter voltage : VCE(sat) =–0.5V max. • Wide ASO leading to high resistance to breakdown. Applications • Relay drivers, high-speed inverters, converters, and other general high-current switching applications.

6th/7th Gen Intel® CoreTM Mini-ITX

Features • 2 DDR4 2133MHz SODIMM up to 32GB • Three independent displays: DP++ + LVDS + eDP • DP++ resolution supports up to 4096x2304 @ 60Hz • Multiple expansion: 1 PCIe x16, 2 Mini PCIe • Storage: 2 SATA 3.0 • Rich I/O: 2 Intel GbE, 2 COM, 4 USB 3.0, 4 USB 2.0

Silicon Ep itaxial Planar Diode

FEATURES ● Low turn-on voltage ● Fast switching ● This device is protected by a PN junction guard ring against excessive voltage,such as electrostatic discharge ● Ideal for precaution of MOS device ,steering ,biasing , and coupling diodes for fast switching and low logic level application ● M

Silicon Epitaxial Planar Diode

FEATURES ● Low turn-on voltage ● Fast switching ● This device is protected by a PN junction guard ring against excessive voltage,such as electrostatic discharge ● Ideal for precaution of MOS device ,steering ,biasing , and coupling diodes for fast switching and low logic level application ● M

Plastic-Encapsulate Fast Schottky Diode

FEATURES ● Low turn-on voltage ● Fast switching ● Microminiature plastic package ● This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge. ● Ideal for protection of MOS device, steering, Biasing, and coupling diodes for fast switching a

0.2W Fast Switching Diodes

Features ◇ Low turn-on voltage ◇ Fast switching ◇ Microminiature plastic package ◇ This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge. ◇ Ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching

Schottky Diodes

Features • Halogen free available upon request by adding suffix -HF • Low turn-on voltage • Fast switching • Microminiature plastic package • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge. • Lead Free Finish/RoHS Compliant(P S

Small Signal Schottky Diode

Features • Low turn-on voltage • Fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge • Ideal for precaution of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level application •

SCHOTTKY DIODES

FEATURES * Low turn-on Voltage VD * Built –in PN Junction Guard Ring

Silicon Epitaxial Planar Diode

FEATURES ● Low turn-on voltage ● Fast switching ● This device is protected by a PN junction guard ring against excessive voltage,such as electrostatic discharge ● Ideal for precaution of MOS device ,steering ,biasing , and coupling diodes for fast switching and low logic level application ● M

SCHOTTKY BARRIER DIODE

SCHOTTKY BARRIER DIODE FEATURES • Low turn-on voltage • Fast switching • Microminiature plastic package • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge • Ideal for protection of MOS devices, steering, biasing, and coupling dio

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • Low turn-on voltage • Fast switching • Microminiature plastic package • These diodes are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge, • Ideal for protection of MOS devices, steering, and coupling diodes for fast switching and low

SCHOTTKY DIODE

Features ● Low turn-on voltage ● Fast switching ● Microminiature plastic package ● There devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge. ● ldeal for protection of MOS devices, steering, blasing,and couplong diodes for fast switchin

SCHOTTKY DIODES

FEATURES * Low turn-on Voltage VD * Built –in PN Junction Guard Ring

SCHOTTKY DIODES

FEATURES * Low turn-on Voltage VD * Built –in PN Junction Guard Ring

Small Signal Schottky Diode

Features • Low turn-on voltage • Fast switching • This device is protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge • Ideal for precaution of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level application •

SCHOTTKY DIODES

FEATURES * Low turn-on Voltage VD * Built –in PN Junction Guard Ring

SCHOTTKY DIODES

FEATURES * Low turn-on Voltage VD * Built –in PN Junction Guard Ring

SCHOTTKY BARRIER RECTIFIERS

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SCHOTTKY BARRIER RECTIFIERS

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SCHOTTKY BARRIER RECTIFIERS

文件：426.99 Kbytes Page：2 Pages

SCHOTTKY BARRIER RECTIFIERS

文件：49.73 Kbytes Page：2 Pages

SCHOTTKY BARRIER RECTIFIERS

文件：426.95 Kbytes Page：2 Pages

10A/60V Low VF Schottky Rectifier

文件：10.66158 Mbytes Page：4 Pages

肖特基二极管

SCHOTTKY BARRIER RECTIFIERS

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SCHOTTKY BARRIER RECTIFIERS

文件：426.2 Kbytes Page：2 Pages

SCHOTTKY BARRIER RECTIFIERS

文件：426.23 Kbytes Page：2 Pages

POWER TRANSISTORS(12A,50V,40W)

BULKHEAD RECEPTACLE

文件：99.1 Kbytes Page：1 Pages

50V/15A Switching Applications

PL, 10KV, F

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ADAPTER, F-F BULKHEAD, 10 KV

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SMALL SIGNAL DIODE VOLTAGE RANGE 30 Volts

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SCHOTTKY DIODES

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Silicon Epitaxial Planar Diode

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Silicon Epitaxial Planar Diode

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Silicon Epitaxial Planar Diode

文件：224.72 Kbytes Page：3 Pages

Plastic-Encapsulate Fast Schottky Diode

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Silicon Epitaxial Planar Diode

文件：193.43 Kbytes Page：3 Pages

Precision Wirewound Resistors

100 Series / SM Series / PC Series • Resistances to 6 Megohms • Resistance Tolerances to ±0.005 • Temperature Coeffcients of ±2 ppm/°C • High TCR Available (Balco & Platinum Wire) • 100 Acceptance Tested / Traceable to NIST • Long Term Stability / 100ppm/year • Matched Resistance Sets t

106/206 In-Line Flanged Diaphragm Seals

FEATURES „ 316L Stainless steel top housing (standard) „ Available with diaphragm welded or bonded to top housing or removable threaded capsule diaphragms „ Flow through design reduces the possibility of clogging „ Large 21/2˝ diaphragm compatible with most Ashcroft instrumentation

Customer Specification

Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 GREEN/YELLOW 5 WHITE 2 BLUE 4 BROWN 2) Cable Assembly 5 Components Cabled a)

Customer Specification

Construction Diameters (In) 1) Component 1 5 X 1 COND a) Conductor 22 (26/36) AWG Bare Copper 0.027 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.049 (1) Color(s) Cond Color Cond Color Cond Color 1 BLACK 3 GREEN/YELLOW 5 WHITE 2 BLUE 4 BROWN 2) Cable Assembly 5 Components Cabled a)

Precision Wirewound Resistors

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