位置：首页 > IC中文资料第6879页 > SD103R25
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF |   | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | |
SD103R25产品属性
- 类型
描述
- 型号
SD103R25
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
DISCRETE POWER DIODES and THYRISTORS
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
KODENSHI |
24+ |
DIP |
880000 |
明嘉莱只做原装正品现货 |
|||
COOPER |
24+ |
SMD |
62300 |
一级代理/全新现货/长期供应! |
|||
COOPER |
2016 |
SMD |
26600 |
||||
LINK |
24+ |
NA/ |
4733 |
原厂直销,现货供应,账期支持! |
|||
KODENSHI原装 |
25+23+ |
DIP |
28053 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY |
24+ |
1206 |
7683 |
新进库存/原装 |
|||
PANJIT/ 强茂 |
24+ |
MSOP10 |
9600 |
原装现货,优势供应,支持实单! |
|||
PANJIT |
18+ |
TO-252 |
85600 |
保证进口原装可开17%增值税发票 |
|||
PANJIT/ 强茂 |
2447 |
TO-252 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
IR |
23+ |
7000 |
SD103R25规格书下载地址
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