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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
SD103N | FAST RECOVERY DIODES Stud Version Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF |   | |
SD103N | FAST RECOVERY DIODES Stud Version | INFINEON 英飞凌 | | |
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
DISCRETE POWER DIODES and THYRISTORS Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve | IRF | | ||
封装/外壳：DO-205AC，DO-30，接线柱 包装：管件 描述：DIODE GEN PURP 1KV 110A DO205 分立半导体产品 二极管 - 整流器 - 单 | ETC 知名厂家 | ETC | | |
SD10 distribution box, top mounting M12-A, built-in control cable 文件：380.19 Kbytes Page：4 Pages | SHIELD | | ||
SD10 distribution box, top mounting M12-A, built-in control cable 文件：380.19 Kbytes Page：4 Pages | SHIELD | | ||
SD10 distribution box, top mounting M12-A, built-in control cable 文件：380.19 Kbytes Page：4 Pages | SHIELD | | ||
SD10 distribution box, top mounting M12-A, built-in control cable 文件：380.19 Kbytes Page：4 Pages | SHIELD | | ||
HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V) Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS | MOSPEC 统懋 | | ||
Silicon Controlled Rectifiers Silicon Controlled Rectifiers Reverse Blocking Triode Thyristors Annular PNPN devices designed for low cost, high volume consumer applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits. Supplied in an inexpensive | MOTOROLA 摩托罗拉 | | ||
SCHOTTKY BARRIER RECTIFIERS(1.0A,20-60V)
| MOSPEC 统懋 | | ||
HIGH FREQUENCY NPN TRANSISTOR ARRAY DESCRIPTION AND APPLICATIONS The µPA103 is a user configurable Silicon bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It is available in a surface mount 14-pin plastic SOP package and a 14-pin ceramic package. Typical applications include: d | NEC 瑞萨 | | ||
HIGH FREQUENCY NPN TRANSISTOR ARRAY DESCRIPTION AND APPLICATIONS The µPA103 is a user configurable Silicon bipolar transistor array consisting of a common emitter pair and three individual bipolar transistors. It is available in a surface mount 14-pin plastic SOP package and a 14-pin ceramic package. Typical applications include: d | NEC 瑞萨 | |
SD103N产品属性
- 类型
描述
- 型号
SD103N
- 制造商
IRF
- 制造商全称
International Rectifier
- 功能描述
FAST RECOVERY DIODES Stud Version
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
DO-205AC (DO-30) |
7000 |
||||
IR |
专业模块 |
MODULE |
8513 |
模块原装主营-可开原型号增税票 |
|||
IR |
22+ |
DO-205AC (DO-30) |
6000 |
终端可免费供样,支持BOM配单 |
|||
IR |
24+ |
MODULE |
2100 |
公司大量全新现货 随时可以发货 |
|||
IR |
23+ |
DO-205AC (DO-30) |
8000 |
只做原装现货 |
|||
Vishay General Semiconductor - |
25+ |
DO-205AC(DO-30) |
9350 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
SD103N规格书下载地址
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DdatasheetPDF页码索引
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