型号 功能描述 生产厂家 企业 LOGO 操作
SD103N

FAST RECOVERY DIODES Stud Version

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

SD103N

FAST RECOVERY DIODES Stud Version

Infineon

英飞凌

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

DISCRETE POWER DIODES and THYRISTORS

Features ■ High power FAST recovery diode series ■ 1.0 to 2.0 µs recovery time ■ High voltage ratings up to 2500V ■ High current capability ■ Optimized turn on and turn off characteristics ■ Low forward recovery ■ Fast and soft reverse recovery ■ Compression bonded encapsulation ■ Stud ve

IRF

封装/外壳:DO-205AC,DO-30,接线柱 包装:管件 描述:DIODE GEN PURP 1KV 110A DO205 分立半导体产品 二极管 - 整流器 - 单

ETC

知名厂家

SD10 distribution box, top mounting M12-A, built-in control cable

文件:380.19 Kbytes Page:4 Pages

SHIELD

SD10 distribution box, top mounting M12-A, built-in control cable

文件:380.19 Kbytes Page:4 Pages

SHIELD

SD10 distribution box, top mounting M12-A, built-in control cable

文件:380.19 Kbytes Page:4 Pages

SHIELD

SD10 distribution box, top mounting M12-A, built-in control cable

文件:380.19 Kbytes Page:4 Pages

SHIELD

0.1/2.5 GHz Si MMIC BUFFER AMPLIFIERS

DESCRIPTION The STB7102, STB7103 and STB7104 designed for Mobile Phone applications (0.1/2.5GHz), are an high isolation Si MMIC Buffer Amplifiers. Manufactured in the third generation of ST proprietary bipolar process, they offers an excellent isolation and a good linearity using a low current co

STMICROELECTRONICS

意法半导体

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

ALPHAWIRE

Customer Specification

Construction Diameters (In) 1) Component 1 8 X 1 COND a) Conductor 24 (19/36) AWG Bare Copper 0.025 b) Insulation 0.011 Wall, Nom. PVC, Semi Rigid 0.047 (1) Color(s) Cond Color Cond Color Cond Color 1 WHITE 4 YELLOW 7 BLUE 2 BROWN 5 SLATE 8 RED 3 GREEN 6 PINK 2) Cable Assembly 8 Componen

ALPHAWIRE

D챕tails complets sur le site du fabricant:

IDEAL # 103 (103) Description du produit Détails complets sur le site du fabricant: IDEAL INDUSTRIES, INC

DBLECTRO

Smooth, high torque, roller ratchet handle

文件:254.3 Kbytes Page:3 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

SD103N产品属性

  • 类型

    描述

  • 型号

    SD103N

  • 制造商

    IRF

  • 制造商全称

    International Rectifier

  • 功能描述

    FAST RECOVERY DIODES Stud Version

更新时间:2025-12-28 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
23+
DO-205AC (DO-30)
7000
IR
24+
MODULE
2100
公司大量全新现货 随时可以发货
IR
专业模块
MODULE
8513
模块原装主营-可开原型号增税票
IR
22+
DO-205AC (DO-30)
6000
终端可免费供样,支持BOM配单
IR
23+
DO-205AC (DO-30)
8000
只做原装现货
Vishay General Semiconductor -
25+
DO-205AC(DO-30)
9350
独立分销商 公司只做原装 诚心经营 免费试样正品保证

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