Silicon Schottky Barrier Diodes for general purpose applications?

Silicon Schottky Barrier Diodes for general purpose applications The SD103A, B, C is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupli

Schottky Diodes

FEATURES ♦ For general purpose applications. ♦ The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fa

SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • Lead Free Finish, RoHS Compliant (Note 2)

Small Signal Schottky Diodes

Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Low Reverse Recovery Time • Low Reverse Capacitance • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection

SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

Si-Schottky-Barrier Diodes

Schottky Barrier Diodes • Nominal current 0.2 A • Repetitive peak reverse voltage 20...40 V • Glass case DO-35 • Weight approx. 0.13 g • Equivalent SMD-version LL103C...LL103A • S

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic le

Small Signal Schottky Barrier Diodes

Small Signal Schottky Barrier Diodes Features • Low forward voltage drop • Guard ring construction for transient protection • Low reverse recovery time • Low reverse capacitance • RoHS compliant

0.35AMP Schottky Barrier Rectifiers

Features * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Low Reverse Recovery Time * Low Reverse Capacitance

Small-Signal Diode

Features ◆ For general purpose applications ◆ The SD103 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ◆ The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for f

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level appl

TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY BARRIER DIODES

FEATURES * For general purpose applications * Low turn-on voltage * Fast switching time * Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge(ESD)

SILICON SCHOTTKY BARRIER DIODES

SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD103A, B, C is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupl

Small signal schottky diodes

Features ● Low Reverse Recovery Time ● Low Reverse Capacitance ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The SD103 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring.The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes

SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • Lead Free Finish, RoHS Compliant (Note 2)

Small Signal Switching Diodes

Features ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic le

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching

SMALL SIGNAL SCHOTTKY DIODES

FEATURES For general purpose applications fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and cou

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

40V Detection switch tube

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SCHOTTKY BARRIER RECTIFIER DIODES

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20V Schottky diode

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Schottky Barrier Diodes

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Small Signal Schottky Diodes

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Small Signal Schottky Diodes

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SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

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Small Signal Schottky Diodes

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SCHOTTKY SWITCHING DIODE

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SMALL SIGNAL SCHOTTKY DIODES

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SCHOTTKY BARRIER DIODES

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Small Signal Schottky

SCHOTTKY BARRIER DIODE

Small Signal Schottky Diodes

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Schottky Barrier Diode

Schottky Barrier Diode ◇ Low Forward Voltage Schottky Rectifier ◇ SOD323F Thin SMD package (Fig-1) ◇ RoHS compliant / Green EMC ◇ Matte Tin (Sn) Lead finish ◇ Moisture Level Sensitivity 1 ◇ Cathode Band / Device marking

350 mA Surface Mounted Schottky Barrier Rectifiers Low Forward Voltage Drop

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Reverse Capacitance

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level appl

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level appl

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE RANGE - 20 to 40 Volts CURRENT - 0.35 Ampere FEATURES * For general purpose applications * Low turn-on voltage * Fast switching time * Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge(ESD)

400mW SOD-123 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode

Specification Features: ■ Low Forward Voltage Drop ■ Flat Lead SOD-123 Small Outline Plastic Package ■ Surface Device Type Mounting ■ RoHS Compliant ■ Green EMC ■ Matte Tin(Sn) Lead Finish ■ Band Indicates Cathode ■ Weight: approx. 0.01g

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The SD103AW to SD103CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, an

SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Very Low Reverse Capacitance • Lead Free/RoHS Compliant (Note 3)

SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE 20 to 40 Volts CURRENT 0.35 Ampers FEATURES • Low turn-on voltage • Fast switching • PN Junction Guard Ring for Transient and ESD Protection. • In compliance with EU RoHS 2002/95/EC directives

Schottky Barrier Diode

FEATURES ● Low Forward Voltage Drop. ● Guard Ring Construction For Transient Protection. ● Negligible Reverse Recovery Time. ● Low Reverse Capacitance. APPLICATIONS ● Schotty barrier switching.

SCHOTTKY BARRIER DIODE

[Micro Electronic Instrument Inc.] VOLTAGE RANGE 20 To 40 Volts CURRENT 350 mA FEATURES • Fast Switching speed • Low forward voltage • Low capacitance • Guard ring for transient and ESD protection • Also available in the DO-35 package as SD103A and Mini-Melf as LL103A

Schottky Barrier Switching Diodes

Schottky Barrier Switching Diodes Features Low forward voltage drop. Guard ring construction for transient protection. Negligible reverse recovery time.

Schottky Barrier Switching Diode

FEATURES - Low power loss, high current capability, low VF - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing code with suffix G means green compound (halogen-free)

SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4)

400mW Small Signal Schottky Diode 20 to 40 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(P Suffix designates RoHS Compliant. See ordering information) • Guard Ring Protection • Low Forward Voltage Drop • Low Power Loss For High Efficiency • Device Marking Code: SD103AW: S4

Schottky Barrier Diode

Schottky Barrier Diode FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance

Schottky Diode in a SOD-123 Plastic Package

Descriptions Schottky Diode in a SOD-123 Plastic Package. Features Low positive pressure drop, can ignore the reverse recovery time. Applications Schottky diode.

SCHOTTKY BARRIER SWITCHING DIODE

SCHOTTKY BARRIER SWITCHING DIODE SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band

400mW Schottky Barrier Switching Diode

Features ◇ Low forward voltage drop ◇ Guard ring construction for transient protection ◇ Negligible reverse recovery time ◇ Low reverse capacitance

Plastic-Encapsulate Diodes

SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Drop. Guard Ring Construction For Transient Protection. Negligible Reverse Recovery Time. Low Reverse Capacitance.

Surface Mount Si-Schottky Diodes

Surface Mount Si-Schottky Diodes • Nominal current 350 mA • Repetitive peak reverse voltage 20...40 V • Plastic case SOD-123 • Weight approx. 0.01g • Plastic material has UL classification 94V-0

SCHOTTKY DIODES

FEATURES ● Low forward voltage drop ● Guard ring construction for transient protection ● Negligible reverse recovery time ● Low reverse capacitance

400mW Small Signal Schottky Diode 20 to 40 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(P Suffix designates RoHS Compliant. See ordering information) • Guard Ring Protection • Low Forward Voltage Drop • Low Power Loss For High Efficiency • Device Marking Code: SD103AW: S4

SCHTTKY DIODES

FEATURES ♦ Low forward voltage drop ♦ Guard ring construction for transient protection ♦ Negligible reverse recovery time ♦ low reverse capacitance