SURFACE MOUNT SCHOTTKY BARRIER DIODES

VOLTAGE 20 to 40 Volts CURRENT 0.35 Ampers FEATURES • Low turn-on voltage • Fast switching • PN Junction Guard Ring for Transient and ESD Protection. • In compliance with EU RoHS 2002/95/EC directives

SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Lead, Halogen and Antimony Free, RoHS Compliant Green Device (Notes 3 and 4)

Surface Mount Schottky Barrier Diodes

SMALL SIGNAL SCHOTTKY DIODES 350m AMPERES 20-40 VOLTS Features: * Low Forward Voltage * Very Small Conduction Losses * Schottky Barrier Diodes Encapsulated in a SOD-123 Package

Schottky Barrier Switching Diode

FEATURES - Low power loss, high current capability, low VF - Surface device type mounting - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish with Nickel(Ni) underplate - Packing code with suffix G means green compound (halogen-free)

Schottky Barrier Diode

FEATURES ● Low Forward Voltage Drop. ● Guard Ring Construction For Transient Protection. ● Negligible Reverse Recovery Time. ● Low Reverse Capacitance. APPLICATIONS ● Schotty barrier switching.

SCHOTTKY BARRIER DIODE

[Micro Electronic Instrument Inc.] VOLTAGE RANGE 20 To 40 Volts CURRENT 350 mA FEATURES • Fast Switching speed • Low forward voltage • Low capacitance • Guard ring for transient and ESD protection • Also available in the DO-35 package as SD103A and Mini-Melf as LL103A

SURFACE MOUNT SCHOTTKY BARRIER DIODE

SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • Low Forward Voltage

Schottky Barrier Switching Diodes

Schottky Barrier Switching Diodes Features Low forward voltage drop. Guard ring construction for transient protection. Negligible reverse recovery time.

0.35AMP Surface Mount Schottky Barrier Rectifiers

FEATURES • Low forward voltage drop • Guard ring construction for transient protection • Negligible reverse recovery time • Low reverse capacitance

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The SD103AW to SD103CW series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, an

SCHTTKY DIODES

FEATURES ♦ Low forward voltage drop ♦ Guard ring construction for transient protection ♦ Negligible reverse recovery time ♦ low reverse capacitance

Surface Mount Si-Schottky Diodes

Surface Mount Si-Schottky Diodes • Nominal current 350 mA • Repetitive peak reverse voltage 20...40 V • Plastic case SOD-123 • Weight approx. 0.01g • Plastic material has UL classification 94V-0

400mW Small Signal Schottky Diode 20 to 40 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(P Suffix designates RoHS Compliant. See ordering information) • Guard Ring Protection • Low Forward Voltage Drop • Low Power Loss For High Efficiency • Device Marking Code: SD103AW: S4

400mW SOD-123 SURFACE MOUNT Very Small Outline Flat Lead Plastic Package Schottky Barrier Diode

Specification Features: ■ Low Forward Voltage Drop ■ Flat Lead SOD-123 Small Outline Plastic Package ■ Surface Device Type Mounting ■ RoHS Compliant ■ Green EMC ■ Matte Tin(Sn) Lead Finish ■ Band Indicates Cathode ■ Weight: approx. 0.01g

SCHOTTKY DIODES

FEATURES ● Low forward voltage drop ● Guard ring construction for transient protection ● Negligible reverse recovery time ● Low reverse capacitance

SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Very Low Reverse Capacitance • Lead Free/RoHS Compliant (Note 3)

400mW Small Signal Schottky Diode 20 to 40 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(P Suffix designates RoHS Compliant. See ordering information) • Guard Ring Protection • Low Forward Voltage Drop • Low Power Loss For High Efficiency • Device Marking Code: SD103AW: S4

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Features ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Low Reverse Recovery Time ● Low Reverse Capacitance

Schottky Barrier Diode

Schottky Barrier Diode FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Capacitance

Plastic-Encapsulate Diodes

SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Drop. Guard Ring Construction For Transient Protection. Negligible Reverse Recovery Time. Low Reverse Capacitance.

Surface Mount Schottky Barrier Diodes

Surface Mount Schottky Barrier Diodes Features • Low Forward Voltage

Schottky Barrier Diode

FEATURES • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Low Capacitance

Schottky Diode in a SOD-123 Plastic Package

Descriptions Schottky Diode in a SOD-123 Plastic Package. Features Low positive pressure drop, can ignore the reverse recovery time. Applications Schottky diode.

SCHOTTKY BARRIER SWITCHING DIODE

SCHOTTKY BARRIER SWITCHING DIODE SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band

Small Signal Schottky Diodes

FEATURES • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fast switching and low logic level applications • Other applications are click suppression, efficient full wave bridges in telephone subsets, and blo

SCHOTTKY DIODES

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Reverse Capacitance

SCHTTKY DIODES

FEATURES ◆ Low forward voltage drop ◆ Guard ring construction for transient protection ◆ Negligible reverse recovery time ◆ low reverse capacitance

SCHTTKY DIODES

FEATURES ♦ Low forward voltage drop ♦ Guard ring construction for transient protection ♦ Negligible reverse recovery time ♦ low reverse capacitance

400mW Schottky Barrier Switching Diode

Features ◇ Low forward voltage drop ◇ Guard ring construction for transient protection ◇ Negligible reverse recovery time ◇ Low reverse capacitance

Schottky Barrier Diode

FEATURES ● Low Forward Voltage Drop. ● Guard Ring Construction For Transient Protection. ● Negligible Reverse Recovery Time. ● Low Reverse Capacitance. APPLICATIONS ● Schotty barrier switching.

400mW Small Signal Schottky Diode 20 to 40 Volts

Features • Halogen free available upon request by adding suffix -HF • Lead Free Finish/RoHS Compliant(P Suffix designates RoHS Compliant. See ordering information) • Guard Ring Protection • Low Forward Voltage Drop • Low Power Loss For High Efficiency • Device Marking Code: SD103AW: S4

SOD-123 Plastic-Encapsulate Diodes

Features Low Capacitance Low Forward Voltage Drop Negligible Reverse Recovery Time Guard Ring Construction for Transient Protection

SCHOTTKY BARRIER DIODE

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Negligible Reverse Recovery Time Low Capacitance

SURFACE MOUNT SCHOTTKY BARRIER DIODE

Low Forward Voltage Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability Classification 94V-0

SURFACE MOUNT SCHOTTKY BARRIER

FEATURES Low turn-on voltage Fast switching PN Junction Guard Ring for Transient and ESD Protection. Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std. . (Halogen Free)

SURFACE MOUNT SCHOTTKY BARRIER DIODE

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Schottky Diode

肖特基二极管

SCHOTTKY BARRIER SWITCHING DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Negligible Reverse Recovery Time • Very Low Reverse Capacitance • Lead Free/RoHS Compliant (Note 3)