7/6th Gen Intel® CoreTM Thin Mini-ITX

Features • 2 DDR4 SODIMM up to 32GB • Three independent displays: LVDS + DVI-I + HDMI*/DP • DP resolution up to 4096x2304 @ 60Hz Dual Channel LVDS resolution up to 1920x1200 @ 60Hz • Multiple expansion: 1 PCIe x4, 2 Mini PCIe • Rich I/O: 2 Intel GbE, 4 COM, 4 USB 3.0, 4 USB 2.0 • LPC EXT-RS

SCHOTTKY SWITCHING DIODE

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10A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

TECHNICAL SPECIFICATIONS OF SCHOTTKY BARRIER RECTIFIER VOLTAGE RANGE - 20 to 100 Volts

VOLTAGE RANGE - 20 to 100 Volts CURRENT - 10 Amperes FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverte

10A SCHOTTKY BARRIER DIODE

Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 180A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

10A SCHOTTKY BARRIER DIODE

Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 180A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

10A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 1 00 Volts CURRENT - 10 .0 Amperes FEATURES • Plastic package has Underwriters Laboratory Fl ammability Classification 9 4V-O • For thorough hole applications • Low profile package • Built- in strain relief • Metal to silicon rectifier majority carr

TECHNICAL SPECIFICATIONS OF SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE RANGE - 20 to 100 Volts

VOLTAGE RANGE - 20 to 100 Volts CURRENT - 10 Amperes FEATURES * Metal to silicon rectifier majority carrier conduction * Low power loss, High efficiency * High current capability * Low forward voltage drop * High surge capacity * For use in low voltage high frequency inverters, free wheeli

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity • For use in low voltage high frequency inverters, free wheeling

10A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For thorough hole applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction

10A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

10A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

VOLTAGE 20 to 150 Volts CURRENT 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

10A DPAK SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

Features Schottky Barrier chip Guard Ring Die Construction Low Profile Package High Surge Current Capability Low Power Loss, High Efficiency Ideal for Printed Circuit Board For Use in Low Voltage, High Frequency Inverters, Free Wheeling Applications

SCHOTTKY BARRIER RECTIFIER(VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes)

VOLTAGE - 20 to 100 Volts CURRENT - 10.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For thorough hole applications • Low profile package • Built-in strain relief • Metal to silicon rectifier majority carrier conduction

10A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

10A SCHOTTKY BARRIER DIODE

Schottky Barrier Chip Guard Ring for Transient and ESD Protection Surge Overload Rating to 180A Peak Low Power Loss, High Efficiency Ideally Suited for Use in High Frequency SMPS, Inverters and As Free Wheeling Diodes

10A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

10A SCHOTTKY BARRIER DIODE

Features ● Schottky Barrier Chip ● Guard Ring Die Construction for Transient Protection ● High Current Capability ● Low Power Loss, High Efficiency ● High Surge Current Capability ● For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications

Si-Schottky-Barrier Diodes

Schottky Barrier Diodes • Nominal current 0.2 A • Repetitive peak reverse voltage 20...40 V • Glass case DO-35 • Weight approx. 0.13 g • Equivalent SMD-version LL103C...LL103A • S

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • Both normal and Pb free product are available : Normal : 80~95 Sn, 5~20 Pb Pb free: 98.5 Sn above

SCHOTTKY DIODES

[ITT Components] SCHOTTKY DIODES

Silicon Schottky Barrier Diodes for general purpose applications?

Silicon Schottky Barrier Diodes for general purpose applications The SD103A, B, C is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupli

SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • Lead Free Finish, RoHS Compliant (Note 2)

Schottky Diodes

FEATURES ♦ For general purpose applications. ♦ The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes for fa

Schottky Barrier Diode

Features 1. High reliability 2. Low reverse current and low forward voltage Applications Low current rectification and high speed switching

SMALL SIGNAL SCHOTTKY DIODES

FEATURES • For general purpose applications • The SD103 series is a Metal-on-silicon junction Schottky barrier device which is protected by a PN junction guard ring.The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing, and coupling diodes

SMALL SIGNAL SCHOTTKY DIODES

FEATURES ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic le

Small Signal Schottky Barrier Diodes

Small Signal Schottky Barrier Diodes Features • Low forward voltage drop • Guard ring construction for transient protection • Low reverse recovery time • Low reverse capacitance • RoHS compliant

Small-Signal Diode

Features ◆ For general purpose applications ◆ The SD103 series is a Metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. ◆ The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for f

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level appl

SILICON SCHOTTKY BARRIER DIODES

SILICON SCHOTTKY BARRIER DIODES for general purpose applications The SD103A, B, C is a metal on silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupl

0.35AMP Schottky Barrier Rectifiers

Features * Low Forward Voltage Drop * Guard Ring Construction for Transient Protection * Low Reverse Recovery Time * Low Reverse Capacitance

Small Signal Schottky Diodes

Features • Lead Free Finish/Rohs Compliant (Note1) (PSuffix designates Compliant. See ordering information) • Low Reverse Recovery Time • Low Reverse Capacitance • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection

Small signal schottky diodes

Features ● Low Reverse Recovery Time ● Low Reverse Capacitance ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection

TECHNICAL SPECIFICATIONS OF SMALL SIGNAL SCHOTTKY BARRIER DIODES

FEATURES * For general purpose applications * Low turn-on voltage * Fast switching time * Protected by a PN junction guard ring against excessive voltage, such as electrostatic discharge(ESD)

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level

SMALL SIGNAL SCHOTTKY DIODES

FEATURES For general purpose applications fast switching and low logic level applications Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and cou

Small Signal Switching Diodes

Features ◇ For general purpose applications ◇ Metal silicon schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for protection of MOS devices,steering,biasing and coupling diodes for fast switching and low logic le

SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Low Reverse Recovery Time • Low Reverse Capacitance • Lead Free Finish, RoHS Compliant (Note 2)

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

SMALL SIGNAL SCHOTTKY BARRIES SWITCHING DIODES

FEATURES Low Forward Voltage Drop Guard Ring Construction for Transient Protection Low Reverse Recovery Time Low Reverse Capacitance Lead free in compliance with EU RoHS 2011/65/EU directive

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level

Schottky Barrier Diode

Schottky Barrier Diode ◇ Low Forward Voltage Schottky Rectifier ◇ SOD323F Thin SMD package (Fig-1) ◇ RoHS compliant / Green EMC ◇ Matte Tin (Sn) Lead finish ◇ Moisture Level Sensitivity 1 ◇ Cathode Band / Device marking

350 mA Surface Mounted Schottky Barrier Rectifiers Low Forward Voltage Drop

FEATURES ● Low Forward Voltage Drop ● Guard Ring Construction for Transient Protection ● Negligible Reverse Recovery Time ● Low Reverse Capacitance

SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching • Low Reverse Capacitance • Lead Free/RoHS Compliant (Note 3) • Green Device, (Note 4 and 5)

SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching • Low Reverse Capacitance • Lead Free/RoHS Compliant (Note 3) • Green Device, (Note 4 and 5)

SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching • Low Reverse Capacitance • Lead Free/RoHS Compliant (Note 3) • Green Device, (Note 4 and 5)

SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching • Low Reverse Capacitance • Lead Free/RoHS Compliant (Note 3) • Green Device, (Note 4 and 5)

SURFACE MOUNT SCHOTTKY BARRIER DIODE ARRAY

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching • Low Reverse Capacitance • Lead Free/RoHS Compliant (Note 3) • Green Device, (Note 4 and 5)

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level appl

Small Signal Schottky Diodes

FEATURES • The SD103 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guardring • The low forward voltage drop and fast switching make it ideal for protection of MOS devices, steering, biasing and coupling diodes for fast switching and low logic level appl

200mW SCHOTTKY BARRIER DIODE

Features • Low Forward Voltage Drop • Guard Ring Construction for Transient Protection • Fast Switching • Low Leakage Current • Three Fully Isolated Schottky Diodes • Halogen free available upon request by adding suffix -HF • Epoxy meets UL 94 V-0 flammability rating • Marking: KLL ​​​​​​