固定输出电压，30V/1.2A精简开关降压型稳压器 SD1013

SD1013是一款输入耐压超过40V，在8V~30V输入电压条件下正常工作，并且能够实现精确恒压以及恒流的同步降压型DC-DC转换器。SD1013内部集成内阻为400mΩ的PMOS作上管、内阻为200mΩ的NMOS作下管，无需外部肖特基二极管，可连续输出800mA电流。输出300mA电流时系统转换效率可达92%，并可完整支持100%占空比。SD1013无需外部补偿，可以依靠自身内置稳定环路实现恒流以及恒压控制。SD1013提供5.15V和5.45V固定输出电压版本，固定1.2A限流，外部最少仅需3个元件即可构成完整的降压系统。SD1013具备输入过压保护功能，当输入电压超过30 • 8V~30V工作电压范围\n• 输入耐压高达40V\n• 提供固定5.15V/5.45V输出电压版本\n• 800mA连续输出电流\n• 高达92%的输出效率\n• CC/CV控制\n• 410KHz开关频率，支持小型电感器\n• 内置软启动\n• 内置工作状态指示灯功能\n• 支持100%占空比\n• 无需外部补偿\n• 外部最少仅需要3个元件\n• ±1.5%恒压精度\n• ±5%恒流精度\n• 短路保护(SCP)\n• 欠压保护(UVLO)\n• 过流保护(OCP)\n• 过压保护(OVP)\n• 过热保护(OTP)\n• 4KV ESD(HBM)\n;

RF/Microwave Si BJT Power Devices & Pallets

RF & MICROWAVE TRANSISTORS VHF FM MOBILE APPLICATIONS

文件：113.52 Kbytes Page：4 Pages

RF & MICROWAVE TRANSISTORS VHF APPLICATIONS

文件：113.4 Kbytes Page：3 Pages

封装/外壳：M113 包装：散装 描述：RF TRANS NPN 35V 150MHZ M113 分立半导体产品 晶体管 - 双极（BJT）- 射频

Trans RF BJT NPN 35V 1A 4-Pin Style M113

RF & MICROWAVE TRANSISTORS 108-152 MHz APPLICATIONS

文件：676.11 Kbytes Page：7 Pages

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

FOR OPTICAL INFORMATION SYSTEM?

DESCRIPTION ML1XX3 is a high power AlGaInP semiconductor laser which provides a stable, single transverse mode oscillation with emission wavelength of 685-nm and standard CW light output of 50mW. ML1XX3 has a window-mirror-facet which improves the maximum output power. That leads to highly relia

N-channel enhancement mode MOS transistor

DESCRIPTION N-channel enhancement mode logic level field-effect power transistor using ‘trench’ technology, in an 8-pin plastic SOT96-1 (SO8) package. FEATURES • Very low on-state resistance. APPLICATIONS • DC to DC converters • General purpose switching applications.

VTB Process Photodiodes

PRODUCT DESCRIPTION Small area planar silicon photodiode in a “flat” window, dual lead TO-46 package. The package incorporates an infrared rejection filter. Cathode is common to the case. These diodes have very high shunt resistance and have good blue response.

GaAs Infrared Emitting Diodes

DESCRIPTION This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAs, 940 nm IRED chip suitable for higher current pulse applications.