Automotive-grade silicon carbide Power MOSFET, 1200 V, 33 A,75 mΩ (typ., TJ = 25 °C) in an H2PAK-7 package

Features • AEC-Q101 qualified • Very high operating junction temperature capability (TJ = 175 °C) • Very fast and robust intrinsic body diode • Extremely low gate charge and input capacitance Applications • Charger • Power supply for renewable energy systems • High frequency DC-DC co

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·RDS(ON)= 105mΩ@VGS=18V Tj=25℃ ·Low Capacitance ·Avalanche Ruggedness APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·High Voltage DC-DC Converters ·Battery Chargers

SiC N-Channel MOSFET

FEATURES ·High Blocking Voltage with Low On-Resistance ·High Speed Switching with Low Capacitances ·Avalanche Ruggednes APPLICATIONS ·Solar Inverters ·Switch Mode Power Supplies ·DC-DC Converters ·Batterry Chargers

汽车级碳化硅功率MOSFET，1200 V、33 A、75 mOhm（典型值，TJ = 25 C），H2PAK-7封装